P10NB50FP ST Microelectronics, P10NB50FP Datasheet

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P10NB50FP

Manufacturer Part Number
P10NB50FP
Description
Search -----> STP10NB50FP
Manufacturer
ST Microelectronics
Datasheet

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Part Number:
P10NB50FP
Manufacturer:
ST
0
www.DataSheet4U.com
www.DataSheet4U.com
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
( ) Pulse width limited by safe operating area
(*) Limited only by maximum temperature allowed
October 1999
STP10NB50
STP10NB50FP
Symbol
dv/dt(
TYPICAL R
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
HIGH CURRENT, HIGH SPEED SWITCHING
SWITCH MODE POWER SUPPLIES (SMPS)
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
I
V
DM
V
V
V
P
T
N - CHANNEL 500V - 0.55 - 10.6A - TO-220/TO-220FP
DGR
I
I
T
ISO
stg
DS
GS
D
D
tot
TYPE
( )
j
1
)
Drain-source Voltage (V
Drain- gate Voltage (R
Gate-source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Peak Diode Recovery voltage slope
Insulation Withstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
®
DS(on)
500 V
500 V
V
= 0.55
DSS
< 0.60
< 0.60
R
DS(on)
c
Parameter
GS
= 25
GS
= 20 k )
= 0)
o
C
10.6 A
10.6 A
c
c
= 25
= 100
I
D
o
C
o
C
(
1
) I
SD
PowerMESH
INTERNAL SCHEMATIC DIAGRAM
10.6 A, di/dt
TO-220
STP10NB50
10.6
42.4
1.08
135
6.4
4.5
1
200 A/ s, V
STP10NB50FP
2
3
-65 to 150
Value
500
500
150
STP10NB50
30
DD
STP10NB50FP
TO-220FP
V
(BR)DSS
10.6(*)
6.4(*)
2000
42.4
0.32
4.5
40
MOSFET
, Tj
T
www.DataSheet4U.com
JMAX
W/
Unit
V/ns
1
o
o
W
V
V
V
A
A
A
V
C
C
o
2
C
1/9
3

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P10NB50FP Summary of contents

Page 1

... INTERNAL SCHEMATIC DIAGRAM Parameter = 100 10.6 A, di/ STP10NB50 STP10NB50FP MOSFET TO-220 TO-220FP Value STP10NB50 STP10NB50FP 500 500 30 10.6 10.6(*) 6.4 6.4(*) 42.4 42.4 135 40 1.08 0.32 4.5 4.5 2000 -65 to 150 150 200 (BR)DSS JMAX www.DataSheet4U.com Unit ...

Page 2

... STP10NB50 STP10NB50FP THERMAL DATA R Thermal Resistance Junction-case thj-case R Thermal Resistance Junction-ambient thj-amb R Thermal Resistance Case-sink thc-sink T Maximum Lead Temperature For Soldering Purpose l AVALANCHE CHARACTERISTICS Symbol I Avalanche Current, Repetitive or Not-Repetitive AR (pulse width limited Single Pulse Avalanche Energy AS (starting ELECTRICAL CHARACTERISTICS (T ...

Page 3

... Test Conditions I =10 =10.6 A di/dt = 100 150 (see test circuit, figure 5) Safe Operating Area for TO-220FP STP10NB50 STP10NB50FP Min. Typ. Max. Unit Min. Typ. Max. Unit ...

Page 4

... STP10NB50 STP10NB50FP Thermal Impedence for TO-220 Output Characteristics Transconductance 4/9 Thermal Impedence for TO-220FP Transfer Characteristics Static Drain-source On Resistance ...

Page 5

... Gate Charge vs Gate-source Voltage Normalized Gate Threshold Voltage vs Temperature Source-drain Diode Forward Characteristics STP10NB50 STP10NB50FP Capacitance Variations Normalized On Resistance vs Temperature 5/9 ...

Page 6

... STP10NB50 STP10NB50FP Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/9 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit ...

Page 7

... DIA. 3.75 TO-220 MECHANICAL DATA mm TYP. MAX. 4.60 1.32 2.72 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 16.4 14.0 2.95 15.75 6.6 3.93 3.85 L2 Dia STP10NB50 STP10NB50FP inch MIN. TYP. MAX. 0.173 0.181 0.048 0.051 0.094 0.107 0.050 0.019 0.027 0.024 0.034 0.044 0.067 0.044 0.067 0.194 0.203 0.094 0.106 0.393 0.409 0.645 0.511 0.551 0.104 0.116 ...

Page 8

... STP10NB50 STP10NB50FP DIM Ø 8/9 TO-220FP MECHANICAL DATA mm MIN. TYP. MAX. 4.4 4.6 2.5 2.7 2.5 2.75 0.45 0.7 0.75 1 1.15 1.7 1.15 1.7 4.95 5.2 2.4 2.7 10 10.4 16 28.6 30.6 9.8 10.6 15.9 16.4 9 9 ¯ L2 inch MIN. TYP. MAX. 0.173 0.181 0.098 0.106 0.098 0.108 0.017 0.027 0.030 0.039 0.045 0.067 0.045 0.067 ...

Page 9

... Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco - The ST logo is a trademark of STMicroelectronics © 1999 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com . STP10NB50 STP10NB50FP 9/9 ...

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