P12NB30 ST Microelectronics, P12NB30 Datasheet

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... TYPE V DSS STP3NB60 300 V STP12NB30F P 300 V TYPICAL R = 0.34 DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED DESCRIPTION Using the latest high voltage MESH OVERLAY process, SGS-Thomson advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’ ...

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... STP12NB30/FP THERMAL DATA R Thermal Resistance Junction-case t hj- Thermal Resistance Junction-ambient t hj- amb R Thermal Resistance Case-sink thc Maximum Lead Temperature For Soldering Purpose l AVALANCHE CHARACTERISTICS Symb ol I Avalanche Current, Repetitive or Not-Repetitive AR (pulse width limited Single Pulse Avalanche Energy AS (starting T ...

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... Test Cond ition di/dt = 100 100 150 STP12NB30/FP Min. Typ . Max Min. Typ . Max Min ...

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... STP12NB30/FP DIM. MIN. A 4.40 C 1. 0.49 F 0.61 F1 1.14 F2 1.14 G 4.95 G1 2 13.0 L5 2.65 L6 15.25 L7 6.2 L9 3.5 DIA. 3.75 4/6 TO-220 MECHANICAL DATA mm TYP. MAX. MIN. 4.60 0.173 1.32 0.048 2.72 0.094 1.27 0.70 0.019 0.88 0.024 1.70 0.044 1.70 0.044 5.15 0.194 2.7 0.094 10.40 0.393 16.4 14.0 0.511 2.95 0.104 15.75 0.600 6.6 0.244 3.93 0.137 3.85 0.147 L2 Dia inch TYP. MAX. ...

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... STP12NB30/FP inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 0.630 1.204 0.417 0.645 0.366 0.126 5/6 Datasheet pdf - http://www.DataSheet4U.net/ ...

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... STP12NB30/FP Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice ...