P40NF10L

Manufacturer Part NumberP40NF10L
DescriptionSearch -----> STP40NF10L
ManufacturerSTMicroelectronics
P40NF10L datasheet
 


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LOW GATE CHARGE STripFET™ POWER MOSFET
TYPE
STP40NF10L
www.DataSheet4U.com
TYPICAL R
(on) = 0.028
DS
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION
This Power Mosfet series realized with STMicro-
electronics unique STripFET process has specifical-
ly been designed to minimize input capacitance and
gate charge. It is therefore suitable as primary
switch in advanced high-efficiency isolated DC-DC
converters for Telecom and Computer application. It
is also intended for any application with low gate
charge drive requirements.
APPLICATIONS
HIGH-EFFICIENCY DC-DC CONVERTERS
UPS AND MOTOR CONTROL
AUTOMOTIVE
ABSOLUTE MAXIMUM RATINGS
Symbol
V
Drain-source Voltage (V
DS
V
Drain-gate Voltage (R
DGR
V
Gate- source Voltage
GS
I
Drain Current (continuos) at T
D
I
Drain Current (continuos) at T
D
l
I
Drain Current (pulsed)
(
)
DM
P
Total Dissipation at T
TOT
Derating Factor
E
(1)
Single Pulse Avalanche Energy
AS
T
Storage Temperature
stg
T
Max. Operating Junction Temperature
j
( ) Pulse width limited by safe operating area
June 2002
N-CHANNEL 100V - 0.028 - 40A TO-220
V
R
I
DSS
DS(on)
D
100 V
< 0.033
40 A
Parameter
= 0)
GS
= 20 k )
GS
= 25°C
C
= 100°C
C
= 25°C
C
(1) Starting T
STP40NF10L
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
Value
100
100
± 17
40
25
160
150
1
430
–65 to 175
175
= 25°C, I
= 20A, V
= 40V
j
D
DD
Unit
V
V
V
A
A
A
W
W/°C
mJ
°C
°C
1/8

P40NF10L Summary of contents

  • Page 1

    ... N-CHANNEL 100V - 0.028 - 40A TO-220 DSS DS(on) D 100 V < 0.033 40 A Parameter = 25° 100° 25°C C (1) Starting T STP40NF10L TO-220 INTERNAL SCHEMATIC DIAGRAM Value 100 100 ± 160 150 1 430 –65 to 175 175 = 25° 20A 40V j ...

  • Page 2

    ... STP40NF10L THERMAL DATA Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-ambient Max T Maximum Lead Temperature For Soldering Purpose l ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V Drain-source www.DataSheet4U.com (BR)DSS Breakdown Voltage I Zero Gate Voltage DSS Drain Current (V I Gate-body Leakage ...

  • Page 3

    ... G GS (see test circuit, Figure 3) Parameter Test Conditions di/dt = 100A/µ 30V 150° (see test circuit, Figure 5) Thermal Impedance STP40NF10L Min. Typ. Max Min. Typ. Max Min. Typ. ...

  • Page 4

    ... STP40NF10L Output Characteristics www.DataSheet4U.com Transconductance Gate Charge vs Gate-source Voltage 4/8 Transfer Characteristics Static Drain-source On Resistance Capacitance Variations ...

  • Page 5

    ... Normalized Gate Threshold Voltage vs Temperature www.DataSheet4U.com Source-drain Diode Forward Characteristics STP40NF10L Normalized On Resistance vs Temperature Normalized Drain-Source Breakdown vs Temperature 5/8 ...

  • Page 6

    ... STP40NF10L Fig. 1: Unclamped Inductive Load Test Circuit www.DataSheet4U.com Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit ...

  • Page 7

    ... L2 Dia STP40NF10L inch MIN. TYP. MAX. 0.173 0.181 0.048 0.051 0.094 0.107 0.050 0.019 0.027 0.024 0.034 0.044 0.067 0.044 0.067 0.194 0.203 0.094 0.106 0.393 0.409 0.645 0.511 0.551 0.104 0.116 0.600 0.620 0.244 0.260 0.137 0.154 0.147 ...

  • Page 8

    ... STP40NF10L www.DataSheet4U.com Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice ...