TC2571 Transcom, TC2571 Datasheet

TC2571

Manufacturer Part Number

TC2571

Description

PHEMT GaAs Power FETs

Manufacturer

Transcom

Datasheet

1.TC2571.pdf (3 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

TC2571

Manufacturer:

MINI

Quantity:

5 000

Current page: 1 of 3
Download datasheet (181Kb)

** For the tight control of the pinch-off voltage range, we divide TC2571 into 3 model numbers to fit customer design requirement

FEATURES

DESCRIPTION

ELECTRICAL SPECIFICATIONS (T

* P

TRANSCOM, INC., 90 Dasoong 7

Web-Site: www.transcominc.com.tw

(1)TC2571P1519 : Vp = -1.5V to -1.9V (2)TC2571P1620 : Vp = -1.6V to -2.0V (3)TC2571P1721 : Vp = -1.7V to -2.1V

If required, customer can specify the requirement in purchasing document. For special Vp requirement, please contact factory for

details.

Symbol

SCL

PAE

1W Typical Output Power at 6 GHz

11dB Typical Power Gain at 6 GHz

High Linearity:

High Power Added Efficiency:

Suitable for High Reliability Application

Breakdown Voltage:

Lg = 0.35 m, Wg = 2.4 mm

100 % DC Tested

Low Cost Ceramic Package

IP3

DSS

1dB

PAE 43 % for Class A Operation

The TC2571 is packaged the TC1501 Pseudomorphic High Electron Mobility Transistor (PHEMT) GaAs

Power chip. The cu-based ceramic package that requires a surface-mount package is a low-cost and high

performance package. All devices are 100% DC tested to assure consistent quality. Typical applications

include high dynamic range power amplifier for commercial applications including Cellular/PCS systems,

and military high performance power amplifier.

DGO

: Output Power of Single Carrier Level

IP3 = 40 dBm Typical at 6 GHz

DGO

Output Power at 1dB Gain Compression Point , f = 6GHz

Power Gain at 1dB Gain Compression , f = 6GHz

Intercept Point of the 3

Power Added Efficiency at 1dB Compression Power, f = 6GHz

Saturated Drain-Source Current at V

Transconductance at V

Pinch-off Voltage at V

Drain-Gate Breakdown Voltage at I

Thermal Resistance

= 8 V, I

15 V

= 300 mA

= 300 mA, *P

1W Low-Cost Packaged PHEMT GaAs Power FETs

-order Intermodulation, f = 6GHz

= 2 V, I

= 2 V, V

SCL

Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County Taiwan, R.O.C.

CONDITIONS

= 17 dBm

= 4.8 mA

DGO

= 0 V

= 2 V, V

=1.2 mA

=25℃ ℃ ℃ ℃ )

Phone: 886-6-5050086

= 0 V

P 1 / 3

PHOTO ENLARGEMENT

MIN

29.5

Fax: 886-6-5051602

-1.7**

TYP

600

400

REV.2_04/12/2004

TC2571

MAX

UNIT

dBm

Volts

C/W

Related parts for TC2571

TC2571 Summary of contents

Page 1

... Output Power of Single Carrier Level SCL ** For the tight control of the pinch-off voltage range, we divide TC2571 into 3 model numbers to fit customer design requirement (1)TC2571P1519 : Vp = -1.5V to -1.9V (2)TC2571P1620 : Vp = -1.6V to -2.0V (3)TC2571P1721 : Vp = -1.7V to -2.1V If required, customer can specify the requirement in purchasing document. For special Vp requirement, please contact factory for details ...

Page 2

... TC2571 ABSOLUTE MAXIMUM RATINGS (T Symbol Parameter V Drain-Source Voltage DS V Gate-Source Voltage GS I Drain Current Input Power Continuous Dissipation T T Channel Temperature CH T Storage Temperature STG TYPICAL SCATTERING PARAMETERS (T Power Bias : 300 S11 Mag Max 8 -180 S21 ...

Page 3

... Web-Site: www.transcominc.com.tw A TCXXXX TCXXXX TCXXXX XXXX XXXX XXXX B A Section B-B 7” 500 Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County Taiwan, R.O.C. Phone: 886-6-5050086 TC2571 REV.2_04/12/2004 2 PLCS 2 PLCS 4 PLCS 4 PLCS 4 PLCS 4 SIDES Bottom Side(Source) B Section A-A Fax: 886-6-5051602 ...

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