BUV83 Inchange Semiconductor, BUV83 Datasheet
BUV83
Manufacturer Part Number
BUV83
Description
(BUV82 / BUV83) Silicon NPN Power Transistors
Manufacturer
Inchange Semiconductor
Datasheet
1.BUV83.pdf
(2 pages)
www.DataSheet.co.kr
INCHANGE Semiconductor
isc
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
·High Switching Speed
APPLICATIONS
·Designed for use in converters, inverters, switching regula-
ABSOLUTE MAXIMUM RATINGS(T
THERMAL CHARACTERISTICS
isc Website：www.iscsemi.cn
SYMBOL
SYMBOL
R
: V
tors, motor control systems and switching applications.
V
V
V
T
I
I
th j-c
P
T
CEO
EBO
I
CM
CES
I
BM
stg
C
B
C
J
CEO(SUS)
B
Silicon NPN Power Transistors
Thermal Resistance, Junction to Case
Collector- Emitter
Voltage V
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Base Current-Peak
Collector Power Dissipation
@ T
Junction Temperature
Storage Temperature Range
= 400V(Min)-BUV82
= 450V(Min)-BUV83
C
=25℃
PARAMETER
BE
PARAMETER
=0
BUV82
BUV83
BUV82
BUV83
a
=25
℃)
-65~150
VALUE
1000
850
400
450
100
150
10
10
6
2
3
MAX
1.25
UNIT
UNIT
℃/W
W
℃
℃
V
V
V
A
A
A
A
isc
Product Specification
BUV82/83
Datasheet pdf - http://www.DataSheet4U.net/
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BUV83 Summary of contents
Page 1
... INCHANGE Semiconductor isc Silicon NPN Power Transistors DESCRIPTION ·Collector-Emitter Sustaining Voltage 400V(Min)-BUV82 CEO(SUS) = 450V(Min)-BUV83 ·High Switching Speed APPLICATIONS ·Designed for use in converters, inverters, switching regula- tors, motor control systems and switching applications. ABSOLUTE MAXIMUM RATINGS(T SYMBOL PARAMETER Collector- Emitter ...
Page 2
... DC Current Gain FE f Current-Gain—Bandwidth Product T Switching Times; Resistive Load Turn-On Time t on Storage Time t s Fall Time t f isc Website：www.iscsemi.cn isc CONDITIONS BUV82 BUV83 I = 2. 1.25A 2. 1.25A ...