RB160A60 Rohm, RB160A60 Datasheet

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RB160A60

Manufacturer Part Number
RB160A60
Description
Schottky barrier diode
Manufacturer
Rohm
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
RB160A60T-31
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Diodes
Schottky barrier diode
RB160A60
General rectification
1) Cylindrical mold type. (MSR)
2) High I surge capability.
3) Low V
4) High ESD.
Silicon epitaxial planar
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current (*1)
Forward current surge peak (t=100µs)
Junction temperature
Storage temperature
(*1) Mounted on epoxy board. 180°Half sine wave
Forward voltage
Reverse current
ESD break down voltage
Features
Construction
Electrical characteristic (Ta=25°C)
Applications
Absolute maximum ratings (Ta=25°C)
Parameter
F.
Parameter
Symbol
ESD
V
I
R
F
Min.
0.4
Symbol
20
-
Tstg
V
I
V
FSM
Io
Tj
RM
Taping specifications (Unit : mm)
R
Dimensions (Unit : mm)
ROHM : MSR
H1
Typ.
7.00
H2
0.5
-
Max.
0.55
29±1
BLUE
-55 to +150
50
L1
-
Limits
150
60
60
60
1
Manufacture Date
A
Unit
µA
kV
V
F
3.0±0.2
E
L2
C=100pF,R=1.5kΩ, forward and reverse : 1 times
I
V
CATHODE BAND
F
R
=1.0A
=60V
Unit
V
V
A
A
C
29±1
φ0.6±0.1
D
B
BROWN
Conditions
*H1(6mm):BROWN
|L1-L2|
Symbol
H1
H2
C
B
D
E
Rev.B
RB160A60
T-31   52.4±1.5
T-32
T-31   5.0±0.5
T-31
T-31
T-32
T-31
T-32
T-31
T-32
T-31
T-32
T-31
T-32
T-31
T-32
T-31
T-32
Standard dimension
φ2.5±0.2
value(mm)
26.0
5.0±0.3
1.0 max.
1/2A±1.2
1/2A±0.4
±0.7
0.2 max.
6.0±0.5
5.0±0.5
1.5 max.
0.4 max.
0
+0.4
0
1/3

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RB160A60 Summary of contents

Page 1

... FSM 150 Tj -55 to +150 Tstg Min. Typ. Max. Unit 0.4 0.5 0. =1. 7.00 50 µA V =60V R kV C=100pF,R=1.5kΩ, forward and reverse : 1 times RB160A60 φ0.6±0.1 29±1 φ2.5±0.2 BROWN Standard dimension Symbol value(mm) T-31   52.4±1.5 A +0.4 T-32 26 T-31   5.0±0.5 B T-31 5.0±0.3 T-31 C 1.0 max. T- T-32 T-31 1/2A±1.2 ...

Page 2

... AVE:11.7ns 0 trr DISPERSION MAP Mounted on epoxy board 1000 IF=0.5A Rth(j-a) Rth(j-l) IM=1mA time(s) 100 td=300us Rth(j- 100 0.001 0.01 0 100 TIME:t(s) Rth-t CHARACTERISTICS RB160A60 1000 f=1MHz 100 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 100 Ta=25℃ 90 f=1MHz 80 VR=10V n=10pcs 70 60 ...

Page 3

... R=1.5kΩ ESD DISPERSION MAP D=t/T 2 VR=30V T Tj=125℃ 1.5 DC D=1/2 1 0.5 Sin(θ=180 100 AMBIENT TEMPERATURE:Ta(℃) Derating Curve゙(Io-Ta) RB160A60 2 D=t/T 2 VR=30V DC Tj=125℃ T 1.5 D=1/2 1 0.5 Sin(θ=180) 0 125 100 CASE TEMPARATURE:Tc(℃) Derating Curve゙ ...

Page 4

... Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any ...

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