D2580

Manufacturer Part NumberD2580
DescriptionSearch -----> 2SD2580
ManufacturerSanyo Semicon Device
D2580 datasheet
 
1
Page 1
2
Page 2
3
Page 3
4
Page 4
Page 1/4

Download datasheet (75Kb)Embed
Next
www.DataSheet4U.com
Ordering number:5796
Features
· High speed.
· High breakdown voltage (V
· High reliability (Adoption of HVP process).
· Adoption of MBIT process.
· On-chip damper diode.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
P
a
a r
m
t e
r e
C
o
e l l
c
o t
- r
o t
B -
a
s
e
V
l o
a t
g
e
C
o
e l l
c
o t
- r
o t
E -
m
t t i
r e
V
l o
a t
g
e
E
m
t i
e t
- r
o t
B -
a
s
e
V
l o
a t
g
e
C
o
e l l
t c
r o
C
r u
e r
t n
C
o
e l l
t c
r o
C
r u
e r
t n
p (
u
s l
) e
C
o
e l l
t c
r o
i D
s s
p i
t a
o i
n
J
u
n
t c
o i
n
T
e
m
p
e
a r
u t
e r
S
o t
a r
g
e
T
e
m
p
e
a r
u t
e r
Electrical Characteristics at Ta = 25˚C
P
a
a r
m
t e
r e
C
o
e l l
t c
r o
C
u
o t
f f
C
r u
e r
t n
C
o
e l l
t c
r o
C
u
o t
f f
C
r u
e r
t n
C
o
e l l
t c
r o
S
u
s
a t
n i
V
l o
a t
g
e
E
m
t t i
r e
C
u
o t
f f
C
r u
e r
t n
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Color TV Horizontal Deflection
Package Dimensions
unit:mm
=1500V).
CBO
2039D
S
y
m
b
l o
V
C
B
O
V
C
E
O
V
E
B
O
I C
I P
C
P C
Tc=25˚C
j T
T
s
g t
S
y
m
b
l o
C
I
V B
=
8
0
0
V
I ,
E 0
=
C
B
O
C
I
V E
=
1
5
0
0
, V
R
=
0
C
E
S
C
B
E
V
I C
=
1
0
0
m
A
I ,
B 0
=
C
E
O
s (
u
) s
I
V B
=
4
V
I ,
C 0
=
E
B
O
E
NPN Triple Diffused Planar Silicon Transistor
2SD2580
Output Applications
[2SD2580]
16.0
5.6
3.4
3.1
2.8
2.0
2.0
1.0
0.6
3
1
2
1:Base
2:Collector
3:Emitter
5.45
5.45
SANYO:TO3PML
C
o
n
d
t i
o i
n
s
R
t a
R
t a
n i
g
o
n
i d
o t
n
s
m
n i
y t
p
8
0
0
4
0
Continued on next page.
O3098TS (KOTO) TA-1137 No.5796-1/4
n i
g
s
U
n
t i
1
5
0
0
V
8
0
0
V
6
V
1
0
A
3
0
A
3
0 .
W
7
0
W
1
5
0
˚C
˚C
5
5
o t
+
1
5
0
s
U
n
t i
m
a
x
1
0
µ
A
1
0 .
m
A
V
1
3
0
m
A

D2580 Summary of contents

  • Page 1

    ... NPN Triple Diffused Planar Silicon Transistor 2SD2580 Output Applications [2SD2580] 16.0 5.6 3.4 3.1 2.8 2.0 2.0 1.0 0 1:Base 2:Collector 3:Emitter 5.45 5.45 SANYO:TO3PML – ...

  • Page 2

    ... INPUT =– Collector-to-Emitter Voltage – 1 0.1 Collector Current – A 2SD2580 ...

  • Page 3

    ... Tc = 25˚ pulse Collector-to-Emitter Voltage – Ambient Temperature, Ta – C 2SD2580 C 10 1 1.0 0 100 1000 - 100 120 ...

  • Page 4

    ... SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of October, 1998. Specifications and information herein are subject to change without notice. 2SD2580 PS No.5796-4/4 ...