IRG4BC20SDS

Manufacturer Part NumberIRG4BC20SDS
DescriptionInsulated Gate Bipolar Transistor With Ultrafast Soft Recovery Diode ( Vces=600v, Vce ( on ) Typ.=1.4v, @vge=15v, Ic=10a )
ManufacturerInternational Rectifier Corp.
IRG4BC20SDS datasheet
 


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INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
Features
Features
Features
Features
• Extremely low voltage drop 1.4Vtyp. @ 10A
• S-Series: Minimizes power dissipation at up to 3
KHz PWM frequency in inverter drives, up to 4
KHz in brushless DC drives.
• Very Tight Vce(on) distribution
• IGBT co-packaged with HEXFRED
ultra-soft-recovery anti-parallel diodes for use
in bridge configurations
2
• Industry standard D
Pak package
Benefits
• Generation 4 IGBT's offer highest efficiencies
available
• IGBT's optimized for specific application conditions
• HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing
• Lower losses than MOSFET's conduction and
Diode losses
Absolute Maximum Ratings
Parameter
V
Collector-to-Emitter Voltage
CES
I
@ T
= 25°C
Continuous Collector Current
C
C
I
@ T
= 100°C
Continuous Collector Current
C
C
I
Pulsed Collector Current
CM
I
Clamped Inductive Load Current
LM
I
@ T
= 100°C
Diode Continuous Forward Current
F
C
I
Diode Maximum Forward Current
FM
V
Gate-to-Emitter Voltage
GE
P
@ T
= 25°C
Maximum Power Dissipation
D
C
P
@ T
= 100°C
Maximum Power Dissipation
D
C
T
Operating Junction and
J
T
Storage Temperature Range
STG
Thermal Resistance
Parameter
R
Junction-to-Case - IGBT
qJC
R
Junction-to-Case - Diode
qJC
R
Junction-to-Ambient ( PCB Mounted,steady-state)*
qJA
Wt
Weight
* When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques
refer to application note #AN-994.
www.irf.com
IRG4BC20SD-S
G
TM
ultrafast,
n-cha nnel
PD -91794
Standard Speed IGBT
C
V
= 600V
CES
V
= 1.4V
CE(on) typ.
@V
= 15V, I
GE
C
E
2
D P a k
Max.
600
19
10
38
38
7.0
38
± 20
60
24
-55 to +150
Typ.
Max.
–––
2.1
–––
3.5
–––
80
1.44
–––
= 10A
Units
V
A
V
W
°C
Units
°C/W
g (oz)
1

IRG4BC20SDS Summary of contents

  • Page 1

    INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Features Features Features Features • Extremely low voltage drop 1.4Vtyp. @ 10A • S-Series: Minimizes power dissipation KHz PWM frequency in inverter drives ...

  • Page 2

    IRG4BC20SD-S Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltageƒ (BR)CES Temperature Coeff. of Breakdown Voltage /DT DV (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th Temperature Coeff. of Threshold Voltage D D ...

  • Page 3

    60% of rated voltage 1 0.0 0.1 100 10 ° 150 C J ° ...

  • Page 4

    IRG4BC20SD Case Temperature ( C Fig Maximum Collector Current vs. Case Temperature 10 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.01 0.00001 0.0001 ...

  • Page 5

    ies res 800 oes ce C ies 600 400 C oes 200 C res Collector-to-Emitter Voltage ...

  • Page 6

    IRG4BC20SD-S 14 50W 150 C ° 480V 15V Collector Current (A) C Fig Typical ...

  • Page 7

    ° ° 4. 100 /µ ...

  • Page 8

    IRG4BC20SD-S 430µF 80% of Vce Fig. 18a - Test Circuit for Measurement off(diode ...

  • Page 9

    Figure 18e. Macro Waveforms for 1000V 50V 600 0µ F 100 V Figure 19. Clamped Inductive Load Test Circuit www.irf.com Figure 18a's D.U. ...

  • Page 10

    IRG4BC20SD-S Repetitive rating: V =20V; pulse width limited by maximum junction temperature (figure 20 =80%( =20V, L=10µ CES GE Pulse width £ 80µs; duty factor £ 0.1%. Pulse width 5.0µs, single shot ...