IRG4BC20SDS International Rectifier Corp., IRG4BC20SDS Datasheet
IRG4BC20SDS
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IRG4BC20SDS Summary of contents
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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Features Features Features Features • Extremely low voltage drop 1.4Vtyp. @ 10A • S-Series: Minimizes power dissipation KHz PWM frequency in inverter drives ...
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IRG4BC20SD-S Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltageƒ (BR)CES Temperature Coeff. of Breakdown Voltage /DT DV (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th Temperature Coeff. of Threshold Voltage D D ...
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60% of rated voltage 1 0.0 0.1 100 10 ° 150 C J ° ...
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IRG4BC20SD Case Temperature ( C Fig Maximum Collector Current vs. Case Temperature 10 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.01 0.00001 0.0001 ...
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ies res 800 oes ce C ies 600 400 C oes 200 C res Collector-to-Emitter Voltage ...
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IRG4BC20SD-S 14 50W 150 C ° 480V 15V Collector Current (A) C Fig Typical ...
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° ° 4. 100 /µ ...
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IRG4BC20SD-S 430µF 80% of Vce Fig. 18a - Test Circuit for Measurement off(diode ...
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Figure 18e. Macro Waveforms for 1000V 50V 600 0µ F 100 V Figure 19. Clamped Inductive Load Test Circuit www.irf.com Figure 18a's D.U. ...
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IRG4BC20SD-S Repetitive rating: V =20V; pulse width limited by maximum junction temperature (figure 20 =80%( =20V, L=10µ CES GE Pulse width £ 80µs; duty factor £ 0.1%. Pulse width 5.0µs, single shot ...