IRG4BC20SDS International Rectifier Corp., IRG4BC20SDS Datasheet - Page 4

• Manufacturer Part Number: IRG4BC20SDS
• Description: Insulated Gate Bipolar Transistor With Ultrafast Soft Recovery Diode ( Vces=600v, Vce ( on ) Typ.=1.4v, @vge=15v, Ic=10a )
• Manufacturer: International Rectifier Corp.

IRG4BC20SD-S
Fig. 4 - Maximum Collector Current vs. Case
4
0.01
20
15
10
0.1
10
0.00001
5
0
1
25
0.50
0.20
0.10
0.05
0.02
0.01
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
50
T , Case Temperature (
C
Temperature
75
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
100
°
125
t , Rectangular Pulse Duration (sec)
C)
1
0.001
150
Fig. 5 - Typical Collector-to-Emitter Voltage
3.0
2.0
1.0
-60 -40 -20
0.01
V
80 us PULSE WIDTH
GE
vs. Junction Temperature
= 15V
Notes:
1. Duty factor D = t / t
2. Peak T = P
T , Junction Temperature ( C)
J
0
J
20
DM
40
x Z
1
0.1
60
thJC
2
P
DM
80 100 120 140 160
+ T
I =
I =
I =
C
C
C
C
t
1
www.irf.com
t
5.0 A
20
10
2
5
°
A
A
A
1