1N482 Microsemi Corporation, 1N482 Datasheet

1N482

Manufacturer Part Number

1N482

Description

High Conductance DO-35 Diodes

Manufacturer

Microsemi Corporation

Datasheet

1.1N482.pdf (1 pages)

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Type

Use Advantages

1N482B

1N483B

1N484B

1N485B

1N486B

High Conductance

Features

Absolute Maximum Ratings

Characteristics at T =

Used as a general purpose diode in power supplies, or in clipping and steering

applications. Operation at temperatures up to 200 degrees C, no derating.

Can be used in harsh environments where hermeticity and low cost are

important. Compatible with all major automatic pick and place mounting

equipment. May be used on ceramic boards along with high temperature IR

solder reflow.

Average Forward Rectified Current at T

Maximum Non-Repetitive Surge (8.3 mSecs. 1/2 sine)

Junction Temperature Range

Storage Temperature Range

Max. Average Power Dissipation

Humidity proof glass

Thermally matched system

No thermal fatigue

No applications restrictions

Sigma Bond™ plated contacts

100% guaranteed solderability

Problem free assembly

Six Sigma quality

LL-35 MiniMELF types available

Inverse Voltage

Volts

(MIN.)

(PIV)

Peak

125

175

225

LL-35 Glass miniMELF package available, substitute an LL prefix instead of "1N"..

Average Rectified

Maximum

Current

Amps

0.2

Ambient

)

1N4150

= 25

Tel: 978-681-0392 - Fax: 978-681-9135

6 Lake Street - Lawrence, MA 01841

1N482B

1N486B

thru

Forward Voltage

Maximum

) @ 0.1A

Volts

Drop

1.0

25.4 m m

(M in.)

1.0"

Symbol

FSM

Pdiss

0.120-.200"

3.05-5.08-

Leng th

DO-35 Diodes

Maximum Leakage

DO -35 G lass P ack age

0.025

µA

Current

) @ PIV

-55 to +200

-65 to +200

1 5 0

µA

Value

0.65

250

0.458-0.558 mm

2.0

0.018-0.022"

Lead Dia.

1.53-2.28 mm

(@0.1 mA)

0.06-0.09"

Saturation

Minimum

Voltage

Dia.

Volts

150

200

250

Amps

Unit

Amp

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