BAS116E6327 Infineon Technologies, BAS116E6327 Datasheet

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BAS116E6327

Manufacturer Part Number
BAS116E6327
Description
DIODE STANDARD RECOVERY RECTIFIER 75V 0.25A 3SOT-23 T/R
Manufacturer
Infineon Technologies
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BAS116E6327
Manufacturer:
NXP
Quantity:
7 084
Peak reverse voltage
Thermal Resistance
Silicon Low Leakage Diode


BAS116
Type
BAS116
Maximum Ratings at T
Parameter
Diode reverse voltage
Forward current
Surge forward current
Total power dissipation
T
Storage temperature
Parameter
Junction - soldering point
BAS116
1
For calculation of R
S
Low-leakage applications
Medium speed switching times

54°C
thJA
please refer to Application Note Thermal Resistance
A
1)
= 25°C, unless otherwise specified
Package
SOT23
1
Configuration
single
Symbol
V
V
I
I
P
T
Symbol
R
F
FS
stg
R
RM
tot
thJS
-65 ... 150
Value
Value

250
370
4.5
80
85
260
Feb-03-2003
BAS116...
Marking
JVs
Unit
V
mA
A
mW
°C
Unit
K/W

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BAS116E6327 Summary of contents

Page 1

Silicon Low Leakage Diode Low-leakage applications  Medium speed switching times  BAS116 Type BAS116 Maximum Ratings 25°C, unless otherwise specified A Parameter Diode reverse voltage Peak reverse voltage Forward current Surge forward current Total power dissipation ...

Page 2

Electrical Characteristics at T Parameter DC Characteristics Breakdown voltage I = 100 µA (BR) Reverse current 150 ° Forward voltage ...

Page 3

Reverse current Parameter R BAS 116 Forward current ...

Page 4

Forward current BAS116 300 mA 250 225 200 175 150 125 100 105 120 °C 150 BAS116... Feb-03-2003 ...

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