BR1100 ON Semiconductor, BR1100 Datasheet - Page 2

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BR1100

Manufacturer Part Number
BR1100
Description
Schottky Barrier Rectifier 1.0 Ampere 100 Volts
Manufacturer
ON Semiconductor
Datasheet
* Pulse Test: Pulse Width = 300 ms, Duty Cycle
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Thermal Resistance, Junction to Ambient
Maximum Instantaneous Forward Voltage *
Maximum Instantaneous Reverse Current @ Rated dc Voltage *
(i
(i
(T
(T
0.05
0.02
F
F
5.0
2.0
1.0
0.5
0.2
0.1
4.0
3.0
2.0
1.0
20
10
L
L
= 1 A, T
= 1 A, T
0
= 25 C)
= 100 C)
0
0
0.1 0.2
20
L
L
= 25 C)
= 100 C)
Figure 1. Typical Forward Voltage
(Mounting Method 3 per Note 1)
40
0.3
v
T
100 C
25 C
F
J
, INSTANTANEOUS VOLTAGE (VOLTS)
SQUARE WAVE
Figure 3. Current Derating
T
= 150 C
A
0.4 0.5
, AMBIENT TEMPERATURE ( C)
60
80
0.6
100
0.7 0.8
dc
(See Note 2)
Characteristic
Characteristic
(T
120
L
= 25 C unless otherwise noted)
0.9
140
2.0%.
1.0
1.1
160
1.2 1.3
http://onsemi.com
180
MBR1100
1.4
200
2
0.04
0.02
0.01
400
200
100
1 K
4.0
2.0
1.0
0.4
0.2
0.1
4.0
3.0
2.0
1.0
40
20
10
0
0
0
{
device in the voltage grouping. Typical reverse current for
lower voltage selections can be estimated from these
same curves if V
The curves shown are typical for the highest voltage
10
T
125 C
100 C
J
Figure 2. Typical Reverse Current {
= 150 C
I
F(AV)
1.0
20
Figure 4. Power Dissipation
, AVERAGE FORWARD CURRENT (AMPS)
V
Symbol
Symbol
R
30
, REVERSE VOLTAGE (VOLTS)
R
R
V
i
qJA
R
F
is sufficiently below rated V
40
2.0
50
SQUARE WAVE
See Note 1
3.0
60
Max
Max
0.79
0.69
0.5
5.0
70
4.0
80
R
.
dc
90
Unit
Unit
Volt
C/W
mA
100
5.0

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