BAV70E6433 Infineon Technologies Corporation, BAV70E6433 Datasheet
BAV70E6433
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BAV70E6433 Summary of contents
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Silicon Switching Diode For high-speed switching applications Common cathode configuration BAV70 BAV70S BAV70L3 BAV70U BAV70T BAV70W Type BAV70 BAV70L3 ** BAV70S BAV70T BAV70U BAV70W ** Target Data Package Configuration SOT23 common cathode TSLP-3-1 common cathode, leadless SOT363 double ...
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Maximum Ratings 25°C, unless otherwise specified A Parameter Diode reverse voltage Peak reverse voltage Forward current Surge forward current µs Total power dissipation BAV70, T 35°C S =tbd BAV70L3 BAV70S, T 85°C ...
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Electrical Characteristics at T Parameter DC Characteristics Breakdown voltage I = 100 µA (BR) Reverse current 150 ° 150 °C R ...
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Reverse current Parameter Forward current 25°C A ...
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Forward current BAV70 250 mA 200 175 150 125 100 Forward current BAV70T 250 mA 200 ...
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Forward current BAV70W 250 mA 200 175 150 125 100 Permissible Pulse Load Fmax FDC p ...
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Permissible Pulse Load Fmax FDC p BAV70U 2 10 K/W D=0 0.005 0.01 0. 0.05 0.1 0.2 0 Permissible Pulse ...