BAW156E6327 Infineon Technologies Corporation, BAW156E6327 Datasheet
BAW156E6327
Manufacturer Part Number
BAW156E6327
Description
Silicon Switching Diode Array
Manufacturer
Infineon Technologies Corporation
Datasheet
1.BAW156E6327.pdf
(4 pages)
BAW156
Type
Parameter
Diode reverse voltage
Peak reverse voltage
Forward current
Surge forward current, t = 1 µs
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Silicon Low Leakage Diode
BAW156
Maximum Ratings at T
Total power dissipation
T
Junction - soldering point
BAW156
1
For calculation of R
Low-leakage applications
Medium speed switching times
s
Common anode configuration
35°C
thJA
please refer to Application Note Thermal Resistance
A
1)
= 25°C, unless otherwise specified
Package
SOT23
1
Configuration
common anode
Symbol
V
V
I
I
P
T
T
Symbol
R
F
FS
j
stg
R
RM
tot
thJS
-65 ... 150
Value
Value
200
250
150
4.5
80
85
460
BAW156...
Apr-30-2003
Marking
JZs
Unit
Unit
V
mA
A
mW
°C
K/W
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BAW156E6327 Summary of contents
Page 1
Silicon Low Leakage Diode Low-leakage applications Medium speed switching times Common anode configuration BAW156 Type BAW156 Maximum Ratings 25°C, unless otherwise specified A Parameter Diode reverse voltage Peak reverse voltage Forward current Surge forward ...
Page 2
Electrical Characteristics at T Parameter DC Characteristics Breakdown voltage I = 100 µA (BR) Reverse current 150 ° Forward voltage ...
Page 3
Reverse current 70V R BAW 156 Forward current ...
Page 4
Forward current BAW156 250 mA 150 100 105 120 °C 150 BAW156... Apr-30-2003 ...