BAS140WE6327 Infineon Technologies Corporation, BAS140WE6327 Datasheet
BAS140WE6327
Manufacturer Part Number
BAS140WE6327
Description
Silicon Schottky Diode
Manufacturer
Infineon Technologies Corporation
Datasheet
1.BAS140WE6327.pdf
(4 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BAS140WE6327
Manufacturer:
Infineon
Quantity:
4 800
Silicon Schottky Diode
Type
Maximum Ratings
Parameter
Diode reverse voltage
Forward current
Surge forward current, t
Total power dissipation,
Junction temperature
Operating temperature range
Storage temperature
Thermal Resistance
Parameter
BAS140W
Junction - soldering point
1
For calculation of R
General-purpose diode for high-speed switching
Circuit protection
Voltage clamping
High-level detection mixing
thJA
please refer to Application Note Thermal Resistance
1)
1 0 ms
113 °C
Marking
4
1 = C
1
Symbol
V
I
I
P
T
T
T
Symbol
R
Pin Configuration
F
FSM
j
op
stg
R
tot
thJS
2 = A
1
-
-55 ... 125
-55 ... 150
Value
Value
120
200
250
150
40
1 50
2
Package
Aug-23-2001
SOD323
BAS140W
VPS05176
Unit
Unit
V
mA
mW
°C
K/W
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BAS140WE6327 Summary of contents
Page 1
Silicon Schottky Diode General-purpose diode for high-speed switching Circuit protection Voltage clamping High-level detection mixing Type BAS140W Maximum Ratings Parameter Diode reverse voltage Forward current Surge forward current Total power dissipation, ...
Page 2
Electrical Characteristics at T Parameter DC Characteristics Breakdown voltage (BR) Reverse current Forward voltage ...
Page 3
Diode capacitance 1MHz BAS 40W/BAS 140W Reverse current Parameter A BAS 40W/BAS 140W ...
Page 4
Forward current °C A BAS 40W/BAS 140W -40 ˚ ˚C 85 ˚ Permissible Puls ...