S1M1V045 Epson Electronics America, Inc., S1M1V045 Datasheet

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S1M1V045

Manufacturer Part Number
S1M1V045
Description
Full CMOS Asynchronous SRAM
Manufacturer
Epson Electronics America, Inc.
Datasheet
Rev.1.0
The S1M1V045B0J7 is a 262,144 words x 16-bit (Word-mode) / 524,288 words x 8-bit (Byte-mode) asynchronous,
random access memory on a monolithic CMOS chip. It is possible to select Word-mode or Byte-mode by CIO-
pin: CIO=V
ideal for applications requiring non-volatile storage with back-up batteries. The asynchronous and static nature
of the memory requires no external clock and no refreshing circuit. It is possible to control the data width by the
data byte control for Word-mode. 3-state output allows easy expansion of memory capacity. The temperature
range of the S1M1V045B0J7 is from –40 to 85 C, and it is suitable for the industrial products.
DESCRIPTION
FEATURES
BLOCK DIAGRAM
Fast Access time ........................ 70ns (2.4V)
Low supply current ..................... LL Version
Completely static ........................ No clock required
Supply voltage ............................ 2.4V to 3.0V
3-state output with wired-OR capability
Non-volatile storage with back-up batteries
Package ..................................... S1M1V045B0J
DD
for Word-mode and CIO=V
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
A11
A12
A13
A14
A15
A16
A17
SA
CS1
CS2
CIO
WE
UB
OE
LB
Super Low Voltage Operation and Low Current Consumption
Access Time 70ns (2.4V)
262,144 Words x 16-bit / 524,288 Words x 8-bit Asynchronous
Wide Temperature Range
I/O1
( 10 )
(9)
10
SS
8
for Byte-mode. Its very low standby power requirement makes it
1024
(1024)
(512)
256
S1M1V045B0J7
I/O Buffer
TFBGA-48 pin (Tape CSP)
Memory Cell Array
Column Gate
1024 x 4096
4M-bit Static RAM
256 x 16(512 x 8)
16(8)
I/O16
( ): in case of Byte-mode
PF1201-01
Rev.1.2

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S1M1V045 Summary of contents

Page 1

... It is possible to control the data width by the data byte control for Word-mode. 3-state output allows easy expansion of memory capacity. The temperature range of the S1M1V045B0J7 is from – and it is suitable for the industrial products. FEATURES Fast Access time ...

Page 2

... Chip Select1 CS2 Chip Select2 LB LOWER Byte Enable (Word-mode use) UB UPPER Byte Enable (Word-mode use) I/ Data I/O CIO Word-mode/Byte-mode Selection V Power Supply (2.4V to 3.0V Power Supply (0V connection 2 S1M1V045B0J CIO A16 A15 A14 A13 I/O16 I/O15 A12 A10 A11 I/O7 I/ ...

Page 3

... I DDO I = 0mA I/O = 2.85V DD Conditions ADD ADD I/O I/O S1M1V045B0J7 + 0 0.3 DD (Ta = – 2.4 to 3.0V Typ. Max. 2.7 3.0 0.0 0.0 – V +0.3 DD – 0.3 (V =0V – 2 Min. Typ. Max. –1.0 – 1.0 –1.0 – ...

Page 4

... Ta = – S1M1V045B0J7 Unit 2.4 to 3.0V Max. – ns – ns – ns – ns – ns – ns – ns – ns – ns – – ns (2.4V to 3.0V) DD (2.4V to 3.0V 5pF (Includes Jig Capacitance) ...

Page 5

... CS1 CS2 LB I/ (Dout (Din – – – CS2, output buffer "Hi-Z" state even if O S1M1V045B0J7 * CW1 t CW2 High CW1 ...

Page 6

... S1M1V045B0J7 Timing Chart (Byte-mode) *1 Read Cycle 17,SA t ACC t ACS1 CS1 t CLZ1 CS2 t ACS2 t CLZ2 OLZ I/ (Dout) *2, *3 Write Cycle 2 (CS2 Control 17, CW1 CS1 CW2 CS2 High-Z I/ (Dout) (Din) – – Note : ...

Page 7

... High-Z High Data Out Data High-Z for Byte-mode. SS – – – – – "High". S1M1V045B0J7 MODE Not Selected DDS , DDS1 Not Selected I I DDS , DDS1 Output disable I I DDA , DDA1 Output disable I I DDA , DDA1 ...

Page 8

... S1M1V045B0J7 Byte-mode (1) Reading data from byte Data is able to read when address and SA are set while holding C – – and "High". Since I/O pins are in "Hi-Z" state when O access time is apparently able to be cut down. Writing data Word-mode (1)Writing data into lower byte There are the following four ways of writing data into the memory. i) Hold CS2 = " ...

Page 9

... In case of the data retention in the standby mode, the power supply can be gone down till the specified voltage. But it is impossible to write or read in this mode. Rev.1.0 – – – – UB, LB, and data are inhibited. 0.2V, there is almost no current flow except through the high resistance S1M1V045B0J7 9 ...

Page 10

... S1M1V045B0J7 PACKAGE DIMENSIONS TFBGA-48 pin BOTTOM VIEW 0.35 0.05 SIDE VIEW TOP VIEW INDEX 0.75 Typ. 7.0 0 SRAM Die Base Tape Unit : mm Rev.1.0 ...

Page 11

... Rev.1.0 THIS PAGE IS BLANK. S1M1V045B0J7 11 ...

Page 12

... S1M1V045B0J7 NOTICE: No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice. Seiko Epson does not assume any liability of any kind arising out of any inaccuracies contained in this material or due to its application or use in any product or circuit and, further, there is no representation that this material is applicable to products requiring high level reliability, such as, medical products ...

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