S1M1V083 Epson Electronics America, Inc., S1M1V083 Datasheet

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S1M1V083

Manufacturer Part Number
S1M1V083
Description
Full CMOS Asynchronous SRAM
Manufacturer
Epson Electronics America, Inc.
Datasheet
Rev.1.1
The S1M1V083B0J7 is a 524,288 words x 16-bit asynchronous, random access memory on a monolithic CMOS
chip. Its very low standby power requirement makes it ideal for applications requiring non-volatile storage with
back-up batteries. The asynchronous and static nature of the memory requires no external clock and no refreshing
circuit. It is possible to control the data width by the data byte control. 3-state output allows easy expansion of
memory capacity. The temperature range of the S1M1V083B0J7 is from –40 to 85 C, and it is suitable for the
industrial products.
DESCRIPTION
FEATURES
BLOCK DIAGRAM
Low supply current ..................... LL Version
Completely static ........................ No clock required
Supply voltage ............................ 2.4V to 3.0V
3-state output with wired-OR capability
Non-volatile storage with back-up batteries
Package ..................................... S1M1V083B0J
Fast Access time ........................ 70ns (2.4V)
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
A11
A12
A13
A14
A15
A16
A17
A18
CS1
CS2
OE
WE
LB
UB
Super Low Voltage Operation and Low Current Consumption
Access Time 70ns (2.4V)
524,288 Words x 16-bit Asynchronous
Wide Temperature Range
10
I/O1
9
1024
512
S1M1V083B0J7
I/O Buffer
TFBGA-48 pin (Tape CSP)
Memory Cell Array
1024 x 512 x 16
Column Gate
8M-bit Static RAM
512 x 16
16
I/O16
PF1107-02
1

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S1M1V083 Summary of contents

Page 1

... The asynchronous and static nature of the memory requires no external clock and no refreshing circuit possible to control the data width by the data byte control. 3-state output allows easy expansion of memory capacity. The temperature range of the S1M1V083B0J7 is from – and it is suitable for the industrial products. ...

Page 2

... Address Input WE Write Enable OE Output Enable CS1 Chip Select1 CS2 Chip Select2 LB LOWER Byte Enable UB UPPER Byte Enable I/ Data I/O V Power Supply (1.8V to 2.7V Power Supply (0V connection 2 S1M1V083B0J CS2 A3 A4 CS1 I/ I/O2 I/O3 A17 A7 I/ A16 ...

Page 3

... I = 0mA cyc I DDO I = 0mA I/O = 2.85V DD Conditions ADD ADD I/O I/O S1M1V083B0J7 + 0 0.3 DD 0.5 (Ta = – 2.4 to 3.0V Typ. Max. 2.7 3.0 0.0 0.0 – V +0.3 DD – 0.8 (V =0V – 2 Min. Typ. Max. –1.0 – 1.0 –1.0 – ...

Page 4

... Ta = – S1M1V083B0J7 Unit 2.4 to 3.0V Max. – ns – ns – ns – ns – ns – ns – ns – ns – ns – – ns (2.4V to 3.0V) DD (2.4V to 3.0V 5pF (Includes Jig Capacitance) ...

Page 5

... I/ (Dout (Din CS2, output buffer "Hi-Z" state even if O Conditions V = 2.5V DDR CS1 = CS2 V – 0.2V or CS2 0.2V DD S1M1V083B0J7 * CW1 t CW2 High CW1 ...

Page 6

... S1M1V083B0J7 Data retention timing (CS1 Control 2.4V V 1.5V DDR t Data hold time CDR CS1 V – 0.2V DD CS1 0.8xV FUNCTIONS Truth Table CS1 CS2 ...

Page 7

... LB and "High", CS2 = "Low" 0.2V, there is almost no current flow except through the high resistance parts S1M1V083B0J7 ="Low",CS2 = "High" and ...

Page 8

... S1M1V083B0J7 PACKAGE DIMENSIONS TFBGA-48 pin BOTTOM VIEW 0.35 0.05 SIDE VIEW TOP VIEW INDEX 0.75 Typ. 10.0 0 SRAM Die Base Tape Unit : mm Rev.1.1 ...

Page 9

... DD t ACC Normalized t –V ACS1 DD t ACS2 4 3.5 Ta= 2.5 2 1.5 1 0.5 0 1.5 2 2.5 3 3.5 V (V) DD Normalized I –Ta DDR 100 V =2. 0.1 –60 –40 – 100 S1M1V083B0J7 Normalized I –V DDA DD 1.6 1.4 Ta=25 C READ,WRITE 1.2 WRITE 1 READ 0.8 0.6 0.4 1.5 2 2.5 3 3.5 V (V) DD Normalized I – 1.4 Ta= =2.85V 1 0.8 0.6 0.4 0.2 0 ...

Page 10

... S1M1V083B0J7 10 THIS PAGE IS BLANK. Rev.1.1 ...

Page 11

... Rev.1.1 THIS PAGE IS BLANK. S1M1V083B0J7 11 ...

Page 12

... S1M1V083B0J7 NOTICE: No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice. Seiko Epson does not assume any liability of any kind arising out of any inaccuracies contained in this material or due to its application or use in any product or circuit and, further, there is no representation that this material is applicable to products requiring high level reliability, such as, medical products ...

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