IDT1028S12Y Integrated Device Technology, Inc., IDT1028S12Y Datasheet

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IDT1028S12Y

Manufacturer Part Number
IDT1028S12Y
Description
256K X 4 Static RAM Corner PWR & GND Pinout
Manufacturer
Integrated Device Technology, Inc.
Datasheet
©2000 Integrated Device Technology, Inc.
256K x 4 advanced high-speed CMOS static RAM
Equal access and cycle times
— Commercial and Industrial: 12/15/20ns
One Chip Select plus one Output Enable pin
Bidirectional data inputs and outputs directly
TTL-compatible
Low power consumption via chip deselect
Available in 400 mil Plastic SOJ package.
I/O
0
–I/O
A
A
WE
OE
17
CS
0
3
4
ADDRESS
DECODER
CONTROL
LOGIC
CMOS Static RAM
1 Meg (256K x 4-Bit)
4
1
nized as 256K x 4. It is fabricated using IDT’s high-perfomance, high-
reliability CMOS technology. This state-of-the-art technology, com-
bined with innovative circuit design techniques, provides a cost-
effective solution for high-speed memory needs.
as 6ns, with address access times as fast as 12ns. All bidirectional
inputs and outputs of the IDT71028 are TTL-compatible and oper-
ation is from a single 5V supply. Fully static asynchronous circuitry
is used, requiring no clocks or refresh for operation.
The IDT71028 is a 1,048,576-bit high-speed static RAM orga-
The IDT71028 has an output enable pin which operates as fast
The IDT71028 is packaged in a 28-pin 400 mil Plastic SOJ.
1,048,576-BIT
I/O CONTROL
MEMORY
ARRAY
2966 drw 01
IDT71028
DSC-2966/08

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IDT1028S12Y Summary of contents

Page 1

... ©2000 Integrated Device Technology, Inc. CMOS Static RAM 1 Meg (256K x 4-Bit) The IDT71028 is a 1,048,576-bit high-speed static RAM orga- nized as 256K fabricated using IDT’s high-perfomance, high- reliability CMOS technology. This state-of-the-art technology, com- bined with innovative circuit design techniques, provides a cost- effective solution for high-speed memory needs ...

Page 2

IDT71028 CMOS Static RAM 1 Meg (256K x 4-Bit SO28 ...

Page 3

IDT71028 CMOS Static RAM 1 Meg (256K x 4-Bit 5.0V ± 10%, Commercial and Industrial Temperature Ranges) CC Symbol Parameter |I | Input Leakage Current Output Leakage Current LO V Output Low Voltage OL V ...

Page 4

IDT71028 CMOS Static RAM 1 Meg (256K x 4-Bit 5.0V ± 10%, Commercial and Industrial Temperature Ranges) CC Symbol Parameter Read Cycle t Read Cycle Time RC t Address Access Time AA t Chip Select Access Time ACS ...

Page 5

IDT71028 CMOS Static RAM 1 Meg (256K x 4-Bit) ADDRESS OE CS DATA OUT SUPPLY CC CURRENT I SB ADDRESS PREVIOUS DATA DATA OUT NOTES HIGH for Read Cycle. 2. Device is continuously selected, ...

Page 6

IDT71028 CMOS Static RAM 1 Meg (256K x 4-Bit) ADDRESS DATA (3) OUT DATA IN ADDRESS DATA IN NOTES write occurs during the overlap of a LOW CS and a ...

Page 7

IDT71028 CMOS Static RAM 1 Meg (256K x 4-Bit) IDT 71028 S XX Device Power Speed Type XX X Package Process/ Temperature Range Blank 6.42 7 Commercial and Industrial Temperature Ranges Commercial (0°C to +70°C) ...

Page 8

... CORPORATE HEADQUARTERS 2975 Stender Way Santa Clara, CA 95054 The IDT logo is a registered trademark of Integrated Device Technology, Inc. Updated to new format Added industrial temperature range offerings Removed 17ns speed grade Revised notes and footnotes on Write Cycle No. 1 and No. 2 diagrams Added Datasheet Document History ...

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