IDT6116

Manufacturer Part NumberIDT6116
Description5.0V 2K X 8 CMOS Asynchronous Static RAM
ManufacturerIntegrated Device Technology, Inc.
IDT6116 datasheet
 


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Features
◆ ◆ ◆ ◆ ◆
High-speed access and chip select times
– Military: 20/25/35/45/55/70/90/120/150ns (max.)
– Industrial: 20/25/35/45ns (max.)
– Commercial: 15/20/25/35/45ns (max.)
◆ ◆ ◆ ◆ ◆
Low-power consumption
◆ ◆ ◆ ◆ ◆
Battery backup operation
– 2V data retention voltage (LA version only)
◆ ◆ ◆ ◆ ◆
Produced with advanced CMOS high-performance
technology
◆ ◆ ◆ ◆ ◆
CMOS process virtually eliminates alpha particle soft-error
rates
◆ ◆ ◆ ◆ ◆
Input and output directly TTL-compatible
◆ ◆ ◆ ◆ ◆
Static operation: no clocks or refresh required
◆ ◆ ◆ ◆ ◆
Available in ceramic and plastic 24-pin DIP, 24-pin Thin Dip,
24-pin SOIC and 24-pin SOJ
◆ ◆ ◆ ◆ ◆
Military product compliant to MIL-STD-833, Class B
Functional Block Diagram
A
0
ADDRESS
DECODER
A
10
I/O
0
CIRCUIT
I/O
7
CS
OE
CONTROL
CIRCUIT
WE
©2000 Integrated Device Technology, Inc.
CMOS Static RAM
16K (2K x 8-Bit)
Description
The IDT6116SA/LA is a 16,384-bit high-speed static RAM
organized as 2K x 8. It is fabricated using IDT's high-performance,
high-reliability CMOS technology.
Access times as fast as 15ns are available. The circuit also offers a
reduced power standby mode. When CS goes HIGH, the circuit will
automatically go to, and remain in, a standby power mode, as long
as CS remains HIGH. This capability provides significant system level
power and cooling savings. The low-power (LA) version also offers a
battery backup data retention capability where the circuit typically
consumes only 1µW to 4µW operating off a 2V battery.
All inputs and outputs of the IDT6116SA/LA are TTL-compatible. Fully
static asynchronous circuitry is used, requiring no clocks or refreshing
for operation.
The IDT6116SA/LA is packaged in 24-pin 600 and 300 mil plastic or
ceramic DIP, 24-lead gull-wing SOIC, and 24-lead J-bend SOJ providing
high board-level packing densities.
Military grade product is manufactured in compliance to the latest
version of MIL-STD-883, Class B, making it ideally suited to military
temperature applications demanding the highest level of performance and
reliability.
INPUT
DATA
1
IDT6116SA
IDT6116LA
128 X 128
MEMORY
ARRAY
I/O CONTROL
DECEMBER 2003
V
CC
GND
,
3089 drw 01
DSC-3089/04

IDT6116 Summary of contents

  • Page 1

    ... All inputs and outputs of the IDT6116SA/LA are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. The IDT6116SA/LA is packaged in 24-pin 600 and 300 mil plastic or ceramic DIP, 24-lead gull-wing SOIC, and 24-lead J-bend SOJ providing high board-level packing densities. ...

  • Page 2

    ... IDT6116SA/LA CMOS Static RAM 2K (16K x 8-Bit) Pin Configurations P24 P24 D24 D24 SO24 SO24 GND 12 DIP/SOIC/SOJ Top View Pin Description Name I GND (1) Truth Table ...

  • Page 3

    ... MAX, 6.42 3 Parameter Min. Typ. Supply Voltage 4.5 5.0 Ground 0 0 Input High Voltage 2.2 3.5 (1) ____ Input Low Voltage -0.5 +0.5V. CC IDT6116SA IDT6116LA Min. Max. Min. ____ ____ 10 ____ 5 ____ ____ ____ 10 ____ 5 ____ ____ ____ 0.4 2.4 ____ 2.4 6116SA25 6116SA35 6116LA20 ...

  • Page 4

    ... IDT6116SA/LA CMOS Static RAM 2K (16K x 8-Bit) DC Electrical Characteristics (V = 5.0V ± 10 0.2V Symbol Parameter Power I Operating Power Supply CC1 SA Current, CS < Outputs Open Max Dynamic Operating CC2 SA Current, CS < Outputs Open LA ( Max MAX I Standby Power Supply ...

  • Page 5

    ... IDT6116SA/LA CMOS Static RAM 2K (16K x 8-Bit) Low V Data Retention Waveform 4.5V t CDR Test Conditions Input Pulse Levels Input Rise/Fall Times Input Timing Reference Levels Output Reference Levels AC Test Load DATA OUT 255Ω Figure 1. AC Test Load Military, Commercial, and Industrial Temperature Ranges DATA RETENTION MODE ≥ ...

  • Page 6

    ... IDT6116SA/LA CMOS Static RAM 2K (16K x 8-Bit) AC Electrical Characteristics Symbol Parameter Read Cycle t Read Cycle Time RC t Address Access Time AA t Chip Select Access Time ACS (3) Chip Select to Output in Low-Z t CLZ t Output Enable to Output Valid OE (3) Output Enable to Output in Low-Z t OLZ (3) Chip Dese lect to Output in High-Z ...

  • Page 7

    ... IDT6116SA/LA CMOS Static RAM 2K (16K x 8-Bit) Timing Waveform of Read Cycle No. 1 ADDRESS OE CS DATA OUT Supply Currents I SB Timing Waveform of Read Cycle No. 2 ADDRESS DATA PREVIOUS DATA VALID OUT Timing Waveform of Read Cycle No DATA OUT NOTES HIGH for Read cycle. ...

  • Page 8

    ... IDT6116SA/LA CMOS Static RAM 2K (16K x 8-Bit) AC Electrical Characteristics Symbol Parameter Write Cycle t Write Cycle Time WC t Chip Select to End-of-Write CW t Address Valid to End-of-Write AW t Address Set-up Time AS t Write Pulse Width WP t Write Recovery Time WR (3) Write to Output in High-Z ...

  • Page 9

    ... IDT6116SA/LA CMOS Static RAM 2K (16K x 8-Bit) Timing Waveform of Write Cycle No. 1 (WE Controlled Timing) ADDRESS DATA PREVIOUS DATA VALID OUT DATA IN Timing Waveform of Write Cycle No. 2 (CS Controlled Timing) ADDRESS DATA IN NOTES must be HIGH during all address transitions. ...

  • Page 10

    ... IDT6116SA/LA CMOS Static RAM 2K (16K x 8-Bit) Ordering Information — Military IDT 6116 XX XXX Device Type Power Speed Ordering Information — Commercial & Industrial IDT 6116 XX XXX Device Type Power Speed Military, Commercial, and Industrial Temperature Ranges X X Package Process/ Temperature Range ...

  • Page 11

    ... IDT6116SA/LA CMOS Static RAM 2K (16K x 8-Bit) Datasheet Document History 1/7/ Pg. 11 08/09/00 02/01/01 12/30/03 Pg. 3,10 CORPORATE HEADQUARTERS 2975 Stender Way Santa Clara, CA 95054 The IDT logo is a registered trademark of Integrated Device Technology, Inc. Military, Commercial, and Industrial Temperature Ranges Updated to new format ...