TIP29D Power Innovations, TIP29D Datasheet

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TIP29D

Manufacturer Part Number
TIP29D
Description
NPN Silicon Power Transistors
Manufacturer
Power Innovations
Datasheet
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
NOTES: 1. This value applies for t
JULY 1968 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
Collector-base voltage (I
Collector-emitter voltage (I
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
R O D U C T
30 W at 25°C Case Temperature
1 A Continuous Collector Current
3 A Peak Collector Current
Customer-Specified Selections Available
2. Derate linearly to 150°C case temperature at the rate of 0.24 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I
V
BE(off)
= 0, R
E
S
= 0)
B
= 0.1 Ω, V
I N F O R M A T I O N
= 0)
p
≤ 0.3 ms, duty cycle ≤ 10%.
CC
= 20 V.
RATING
C
E
B
Pin 2 is in electrical contact with the mounting base.
NPN SILICON POWER TRANSISTORS
TIP29D
TIP29E
TIP29F
TIP29D
TIP29E
TIP29F
TO-220 PACKAGE
(TOP VIEW)
SYMBOL
½LI
V
V
V
T
I
P
P
TIP29D, TIP29E, TIP29F
CBO
CEO
EBO
CM
T
I
I
T
C
stg
B
tot
tot
L
j
C
B(on)
2
1
2
3
= 0.4 A, R
-65 to +150
-65 to +150
VALUE
160
180
200
120
140
160
250
0.4
30
32
5
1
3
2
BE
= 100 Ω,
MDTRACA
UNIT
mJ
°C
°C
°C
W
W
V
V
V
A
A
A
1

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TIP29D Summary of contents

Page 1

... JULY 1968 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NPN SILICON POWER TRANSISTORS Pin electrical contact with the mounting base. RATING TIP29D TIP29E TIP29F TIP29D TIP29E TIP29F TIP29D, TIP29E, TIP29F TO-220 PACKAGE (TOP VIEW MDTRACA SYMBOL VALUE UNIT 160 V 180 V ...

Page 2

... TIP29D, TIP29E, TIP29F NPN SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature PARAMETER Collector-emitter (BR)CEO C breakdown voltage (see Note 160 V CE Collector-emitter 180 V CES CE cut-off current V = 200 V CE Collector cut-off CEO CE current Emitter cut-off ...

Page 3

... BASE-EMITTER VOLTAGE vs COLLECTOR CURRENT 25°C C 0·01 0· Collector Current - A C Figure 3. TIP29D, TIP29E, TIP29F vs BASE CURRENT TCS631AE I = 100 300 1·0 10 100 1000 I - Base Current - mA B Figure 2. TCS631AF 1· ...

Page 4

... TIP29D, TIP29E, TIP29F NPN SILICON POWER TRANSISTORS MAXIMUM SAFE OPERATING REGIONS 100 10 1·0 0·1 0·01 4 MAXIMUM FORWARD-BIAS SAFE OPERATING AREA t = 300 µ 0 0 0 Operation TIP29D TIP29E TIP29F 1·0 10 100 V - Collector-Emitter Voltage - V CE Figure 4. ...

Page 5

... C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm JULY 1968 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NPN SILICON POWER TRANSISTORS MECHANICAL DATA 2,95 2,54 6,6 6,0 15,90 14,55 6,1 3,5 14,1 12,7 1,70 1,07 2,74 2,34 5,28 4,88 ALL LINEAR DIMENSIONS IN MILLIMETERS TIP29D, TIP29E, TIP29F 4,70 4,20 1,32 1,23 0,64 0,41 2,90 2,40 VERSION 2 MDXXBE 5 ...

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