SI9410BDY Vishay Siliconix, SI9410BDY Datasheet

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SI9410BDY

Manufacturer Part Number
SI9410BDY
Description
N-Channel 30-V (D-S) MOSFET
Manufacturer
Vishay Siliconix
Datasheet

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Part Number:
SI9410BDY-T1-E3
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VISHAY
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32 875
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Notes
a.
Document Number: 72269
S-31409—Rev. A, 07-Jul-03
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current (10 ms Pulse Width)
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Foot
V
Surface Mounted on 1” x 1” FR4 Board.
i
DS
30
30
(V)
J
ti
t A bi
Ordering Information: Si9410BDY
J
J
a
a
0.033 @ V
0.024 @ V
= 150_C)
= 150_C)
t
a
a
Parameter
Parameter
r
G
S
S
S
DS(on)
a
a
1
2
3
4
GS
GS
(W)
N-Channel 30-V (D-S) MOSFET
= 4.5 V
= 10 V
Si9410BDY-T1 (with Tape and Reel)
Top View
a
SO-8
A
8
7
6
5
= 25_C UNLESS OTHERWISE NOTED)
Steady State
Steady State
T
T
T
T
t v 10 sec
A
A
A
A
D
D
D
D
New Product
I
= 25_C
= 70_C
= 25_C
= 70_C
D
8.1
6.9
(A)
Symbol
Symbol
T
R
R
R
V
J
V
I
P
P
DM
, T
I
I
I
thJA
thJF
DS
GS
D
D
S
D
D
stg
FEATURES
D TrenchFETr Power MOSFETS
G
N-Channel MOSFET
10 secs
Typical
8.1
6.5
2.1
2.5
1.6
40
70
20
D
S
- 55 to 150
"20
30
30
Steady State
Maximum
Vishay Siliconix
6.2
5.0
1.2
1.5
0.9
50
85
24
Si9410BDY
www.vishay.com
Unit
Unit
_C/W
C/W
_C
W
W
V
V
A
A
1

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SI9410BDY Summary of contents

Page 1

... Ordering Information: Si9410BDY Si9410BDY-T1 (with Tape and Reel) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction) ...

Page 2

... Si9410BDY Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain-Source On-State Resistance Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic ...

Page 3

... V - Source-to-Drain Voltage (V) SD Document Number: 72269 S-31409—Rev. A, 07-Jul-03 New Product 1200 1000 25_C J 0.8 1.0 1.2 Si9410BDY Vishay Siliconix Capacitance C 800 600 400 C oss 200 C rss Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 1 ...

Page 4

... Si9410BDY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 0.2 = 250 0.0 - 0.2 - 0.4 - 0 Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 New Product 100 125 150 Safe Operating Area 100 ...

Page 5

... TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Document Number: 72269 S-31409—Rev. A, 07-Jul-03 New Product - Square Wave Pulse Duration (sec) Si9410BDY Vishay Siliconix 1 10 www.vishay.com 5 ...

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