SI9804DY Vishay Siliconix, SI9804DY Datasheet
SI9804DY
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SI9804DY Summary of contents
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... D S N-Channel MOSFET Symbol stg Symbol R thJA Si9804DY Vishay Siliconix Limit Unit 7.8 6 2.1 2 1.6 –55 to 150 C Limit Unit 50 C/W www.vishay.com FaxBack 408-970-5600 1 ...
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... Si9804DY Vishay Siliconix Parameter Symbol Static Gate Threshold Voltage V GS(th) Gate-Body Leakage I GSS Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current I I DSS DSS a On-State Drain Current I D(on Drain-Source On-State Resistance Drain-Source On-State Resistance r r DS(on) DS(on) a Forward Transconductance a Diode Forward Voltage ...
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... 1000 500 On-Resistance vs. Junction Temperature 2 1.2 0.8 0 –50 Si9804DY Vishay Siliconix Transfer Characteristics T = 125 –55 C 0.5 1.0 1.5 2.0 2.5 3.0 V – Gate-to-Source Voltage (V) GS Capacitance C iss C oss C rss – Drain-to-Source Voltage (V) ...
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... Si9804DY Vishay Siliconix Source-Drain Diode Forward Voltage 150 0.2 0.4 0.6 0.8 V – Source-to-Drain Voltage (V) SD Threshold Voltage 0.4 0 250 A D –0.0 –0.2 –0.4 –0.6 –0.8 – – Temperature ( C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 ...