SI9948AEY Vishay Siliconix, SI9948AEY Datasheet

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SI9948AEY

Manufacturer Part Number
SI9948AEY
Description
Dual P-Channel 60-V (D-S)/ 175C MOSFET
Manufacturer
Vishay Siliconix
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI9948AEY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI9948AEY-T1-GE3
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Quantity:
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Part Number:
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Manufacturer:
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Quantity:
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Notes
a.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70759
S-57253—Rev. B, 24-Feb-98
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Junction-to-Ambient
Junction-to-Ambient
V
Surface Mounted on 1” x 1” FR4 Board
DS
–60
–60
G
G
S
S
(V)
1
1
2
2
1
2
3
4
a
a
Top View
SO-8
Dual P-Channel 60-V (D-S), 175 C MOSFET
J
J
a
a
0.26 @ V
0.17 @ V
= 175 C)
= 175 C)
r
DS(on)
8
7
6
5
Parameter
GS
Parameter
GS
a
a
= –4.5 V
( )
= –10 V
D
D
D
D
1
1
2
2
a
I
D
P-Channel MOSFET
G
(A)
2.6
2.1
1
Steady State
t
T
T
T
T
A
A
A
A
D
= 25 C
= 70 C
= 25 C
= 70 C
10 sec
1
S
1
D
1
Symbol
Symbol
T
R
R
V
J
V
I
P
P
, T
thJA
thJA
DM
I
I
I
DS
GS
D
D
S
D
D
stg
P-Channel MOSFET
G
2
Typ
www.vishay.com FaxBack 408-970-5600
93
–55 to 175
D
Limit
Vishay Siliconix
2
–60
2.4
1.7
S
–2
2.6
2.2
20
15
2
D
2
Si9948AEY
Max
62.5
Unit
Unit
C/W
C/W
W
W
V
V
A
A
A
C
2-1

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SI9948AEY Summary of contents

Page 1

... stg Symbol Typ t 10 sec R R thJA thJA Steady State www.vishay.com FaxBack 408-970-5600 Si9948AEY Vishay Siliconix Limit Unit – 2.6 2 –2 2 1.7 –55 to 175 C Max Unit 62 ...

Page 2

... Si9948AEY Vishay Siliconix Parameter Symbol Static Gate Threshold Voltage V Gate-Body Leakage I Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-State Resistance Drain-Source On-State Resistance r r DS(on) DS(on) a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge ...

Page 3

... C rss On-Resistance vs. Junction Temperature 1.5 1.2 0.9 0 –50 –25 Si9948AEY Vishay Siliconix Transfer Characteristics T = – 150 – Gate-to-Source Voltage (V) GS Capacitance C iss C oss – Drain-to-Source Voltage (V) ...

Page 4

... Si9948AEY Vishay Siliconix Source-Drain Diode Forward Voltage 175 0.3 0.6 0.9 V – Source-to-Drain Voltage (V) SD Threshold Voltage 0.8 0 250 A D 0.4 0.2 0.0 –0.2 –0.4 –50 – 100 T – Temperature ( C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 – ...

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