BFR949L3 Infineon Technologies Corporation, BFR949L3 Datasheet

BFR949L3

Manufacturer Part Number

BFR949L3

Description

Rf-bipolar NPN Type Transistors With Transition Frequency of 9 GHZ

Manufacturer

Infineon Technologies Corporation

Datasheet

1.BFR949L3.pdf (3 pages)

Current page: 1 of 3
Download datasheet (29Kb)

NPN Silicon RF Transistor

Preliminary data

ESD: Electrostatic discharge sensitive device, observe handling precaution!

Type

BFR949L3

Maximum Ratings

Parameter

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

Base current

Total power dissipation

Junction temperature

Ambient temperature

Storage temperature

Thermal Resistance

Junction - soldering point

1 T

2 For calculation of R

For low noise, high-gain broadband amplifiers at

collector currents from 1 mA to 20 mA

F = 1.0 dB at 1 GHz

is measured on the collector lead at the soldering point to the pcb

= 9 GHz

100°C

thJA

please refer to Application Note Thermal Resistance

Marking

1 = B

Pin Configuration

2 = E

Symbol

stg

CEO

CES

CBO

EBO

tot

thJS

3 = C

-65 ... 150

Value

250

150

1.5

tbd

Package

TSLP-3-1

Aug-09-2001

BFR949L3

Unit

°C

K/W

Related parts for BFR949L3

BFR949L3 Summary of contents

Page 1

... Application Note Thermal Resistance thJA 1 Pin Configuration Symbol V CEO V CES V CBO V EBO tot stg R thJS 1 BFR949L3 3 2 Package TSLP-3-1 Value Unit 1 250 mW 150 °C -65 ... 150 -65 ... 150 K/W tbd Aug-09-2001 ...

Page 2

... CB E Emitter-base cutoff current current gain mA 25°C, unless otherwise specified A Symbol V (BR)CEO I CES I CBO I EBO BFR949L3 Values Unit min. typ. max 100 µ 100 0.1 µA 100 140 200 - Aug-09-2001 ...

Page 3

... A Symbol Sopt , Sopt Sopt L Lopt Sopt L Lopt |S 21e = 1 BFR949L3 Values min. typ. max 2 Aug-09-2001 Unit GHz pF dB ...

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