STPS3L60C2 STMicroelectronics, STPS3L60C2 Datasheet

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STPS3L60C2

Manufacturer Part Number
STPS3L60C2
Description
Power Schottky Rectifier
Manufacturer
STMicroelectronics
Datasheet
MAIN PRODUCT CHARACTERISTICS
FEATURES AND BENEFITS
DESCRIPTION
Axial Power Schottky rectifier suited for Switch
Mode Power Supplies and high frequency DC to
DC converters. Packaged in DO-201AD, this
device is intended for use in low voltage, high
frequency inverters and small battery chargers.
For
constraints, e.g Telecom battery charger, this
product is also offered in DO-15 (STPS3L60Q).
ABSOLUTE RATINGS (limiting values)
* :
July 2003 - Ed: 2A
Symbol
I
NEGLIGIBLE SWITCHING LOSSES
LOW THERMAL RESISTANCE
AVALANCHE CAPABILITY SPECIFIED
V
F(RMS)
dV/dt
I
P
I
F(AV)
T
dPtot
FSM
RRM
ARM
Tj
dTj
stg
applications
V
Tj (max)
F
V
I
F(AV)
(max)
Repetitive peak reverse voltage
RMS forward current
Average forward current
Surge non repetitive forward current
Repetitive peak avalanche power
Storage temperature range
Maximum operating junction temperature *
Critical rate of rise of reverse voltage
®
RRM
Rth j
(
1
where
a
)
thermal runaway condition for a diode on its own heatsink
there
150°C
0.61 V
60 V
3 A
are
Parameter
space
POWER SCHOTTKY RECTIFIER
T
tp = 10 ms Sinusoidal
tp = 1µs Tj = 25°C
L
= 105°C
= 0.5
STPS3L60-C2
STPS3L60-C2
DO-201AD
- 65 to + 150
10000
Value
2000
100
150
60
10
3
V/µs
Unit
°C
°C
W
V
A
A
A
1/4

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STPS3L60C2 Summary of contents

Page 1

MAIN PRODUCT CHARACTERISTICS I F(AV) V RRM Tj (max) V (max) F FEATURES AND BENEFITS NEGLIGIBLE SWITCHING LOSSES LOW THERMAL RESISTANCE AVALANCHE CAPABILITY SPECIFIED DESCRIPTION Axial Power Schottky rectifier suited for Switch Mode Power Supplies and high frequency DC ...

Page 2

STPS3L60-C2 THERMAL RESISTANCES Symbol R Junction to ambient th(j-a) R Junction to leads th(j-l) STATIC ELECTRICAL CHARACTERISTICS Symbol Parameter I * Reverse leakage current Forward voltage drop F Pulse test : * tp = 380 µs, < ...

Page 3

Fig. 5: Non repetitive surge peak forward current versus overload duration (maximum values). IM( t(s) =0.5 0 1E-3 1E-2 Fig. 7: Reverse leakage current versus reverse voltage applied (typical values). IR(mA) ...

Page 4

... No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. ...

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