STP3NA60FI STMicroelectronics, STP3NA60FI Datasheet

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STP3NA60FI

Manufacturer Part Number
STP3NA60FI
Description
N - Channel Enhancement Mode Fast Power Mos Transistor
Manufacturer
STMicroelectronics
Datasheet

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DESCRIPTION
This series of POWER MOSFETS represents the
most advanced high voltage technology. The
optimized cell layout coupled with a new
proprietary edge termination concur to give the
device low R
ruggedness and superior switching performance.
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
( ) Pulse width limited by safe operating area
November 1996
STP3NA60
STP3NA60FI
Symbol
TYPICAL R
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100
LOW INTRINSIC CAPACITANCES
GATE GHARGE MINIMIZED
REDUCED THRESHOLD VOLTAGE SPREAD
HIGH CURRENT, HIGH SPEED SWITCHING
SWITCH MODE POWER SUPPLIES (SMPS)
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
I
V
D M
V
V
V
P
T
DG R
30V GATE TO SOURCE VOLTAGE RATING
I
I
T
ISO
stg
D S
GS
D
D
tot
TYPE
( )
j
Drain-source Voltage (V
Drain-gate Voltage (R
Gate-source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Insulation Withstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
DS(on)
DS(on)
600 V
600 V
V
and gate charge, unequalled
= 3.3
DSS
Parameter
R
< 4
< 4
DS( on)
c
G S
= 25
GS
N - CHANNEL ENHANCEMENT MODE
= 20 k )
= 0)
o
C
c
c
FAST POWER MOS TRANSISTOR
2.9 A
2.1 A
= 25
= 100
I
D
o
C
o
C
o
C
INTERNAL SCHEMATIC DIAGRAM
STP3NA60
TO-220
11.6
0.64
2.9
1.8
80
1
-65 to 150
2
Value
3
600
600
150
30
STP3NA60FI
STP3NA60FI
STP3NA60
ISOWATT220
2000
11.6
0.32
2.1
1.3
40
1
W/
Unit
2
o
o
W
V
V
V
A
A
A
V
C
C
3
o
1/10
C

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STP3NA60FI Summary of contents

Page 1

... November 1996 STP3NA60FI FAST POWER MOS TRANSISTOR I D 2 TO-220 INTERNAL SCHEMATIC DIAGRAM Value STP3NA60 600 600 2 100 C 1 0.64 -65 to 150 150 STP3NA60 ISOWATT220 Unit STP3NA60FI 2.1 A 1 2000 1/10 ...

Page 2

STP3NA60/FI THERMAL DATA R Thermal Resistance Junction-case thj-cas e R Thermal Resistance Junction-ambient thj- amb R Thermal Resistance Case-sink t hc- sin k T Maximum Lead Temperature For Soldering Purpose l AVALANCHE CHARACTERISTICS Symbol Parameter I Avalanche Current, Repetitive or ...

Page 3

ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter t Turn-on Time V d(on Rise Time (see test circuit, figure 3) (di/dt) Turn-on Current Slope (see test circuit, figure 5) Q Total ...

Page 4

STP3NA60/FI Thermal Impedeance For TO-220 Derating Curve For TO-220 Output Characteristics 4/10 Thermal Impedance For ISOWATT220 Derating Curve For ISOWATT220 Transfer Characteristics ...

Page 5

Transconductance Gate Charge vs Gate-source Voltage Normalized Gate Threshold Voltage vs Temperature STP3NA60/FI Static Drain-source On Resistance Capacitance Variations Normalized On Resistance vs Temperature 5/10 ...

Page 6

STP3NA60/FI Turn-on Current Slope Cross-over Time Accidental Overload Area 6/10 Turn-off Drain-source Voltage Slope Switching Safe Operating Area Source-drain Diode Forward Characteristics ...

Page 7

Fig. 1: Unclamped Inductive Load Test Circuits Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Reverse Recovery Time STP3NA60/FI Fig. 2: Unclamped Inductive Waveforms Fig. 4: Gate Charge Test ...

Page 8

STP3NA60/FI TO-220 MECHANICAL DATA mm DIM. MIN. TYP. A 4.40 C 1.23 D 2.40 D1 1.27 E 0.49 F 0.61 F1 1.14 F2 1.14 G 4.95 G1 2.4 H2 10.0 L2 16.4 L4 13.0 L5 2.65 L6 15.25 L7 6.2 ...

Page 9

ISOWATT220 MECHANICAL DATA mm DIM. MIN. TYP. A 4.4 B 2.5 D 2.5 E 0.4 F 0.75 F1 1.15 F2 1.15 G 4. 28.6 L4 9 Ø ...

Page 10

STP3NA60/FI Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequ ences of use of such information nor for any infringement of patents or other rights of third parties which may results ...

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