STP4435 Stanson Technology Co., Ltd., STP4435 Datasheet
STP4435
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STP4435 Summary of contents
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... DESCRIPTION The STP4435 is the P-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits where high-side switching ...
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... TEL: (650) 9389294 FAX: (650) 9389295 STP4435 P Channel Enhancement Mode MOSFET Symbol Typical VDSS -30 VGSS ±20 TA=25℃ ID -10.0 TA=70 ℃ -7.0 IDM -50 IS -2.3 TA=25℃ 2.8 PD TA=70 ℃ 1.8 TJ -55/150 TSTG -55/150 RθJA 2 Copyright © 2007, Stanson Corp. 10A - Unit ℃ ℃ ℃ STP4435 2008. V1 ...
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... V =-15V,R =15Ω =-1A,V =-10V D GEN d(off) R =6Ω STP4435 10A - Min Typ Max Unit -30 V -1.0 -3 ±100 - - mΩ -0.8 -1 2.3 nC 4.5 680 120 Copyright © 2007, Stanson Corp. STP4435 2008. V1 ...
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... TYPICAL CHARACTERICTICS 120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295 STP4435 P Channel Enhancement Mode MOSFET 4 Copyright © 2007, Stanson Corp. STP4435 2008. V1 10A - ...
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... TYPICAL CHARACTERICTICS 120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295 STP4435 P Channel Enhancement Mode MOSFET 5 Copyright © 2007, Stanson Corp. STP4435 2008. V1 10A - ...
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... PACKAGE OUTLINE SOP-8P 120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295 STP4435 P Channel Enhancement Mode MOSFET 6 Copyright © 2007, Stanson Corp. STP4435 2008. V1 10A - ...