BCR08AM-14 Renesas, BCR08AM-14 Datasheet
BCR08AM-14
Related parts for BCR08AM-14
BCR08AM-14 Summary of contents
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... Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself ...
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... Peak gate voltage GM I Peak gate current GM T Junction temperature j T Storage temperature stg — Weight 1. Gate open. MITSUBISHI SEMICONDUCTOR TRIAC BCR08AM-14 OUTLINE DRAWING T TERMINAL 1 T TERMINAL 2 GATE TERMINAL CIRCUMSCRIBE Voltage class 14 700 840 Conditions Commercial frequency, sine full wave 360 conduction, Tc=67 C ...
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... D DRM 3 Junction to case 4 T =125 C j Commutating voltage and current waveforms 3.0 3.5 4.0 10 BCR08AM-14 LOW POWER USE PLANAR PASSIVATION TYPE Limits Min. Typ. Max. — — 1.0 — — 2.0 — — 2.0 — — 2.0 — — 2.0 — — 5 — ...
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... CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 140 RESISTIVE, INDUCTIVE LOADS 120 100 80 60 360 40 CONDUCTION RESISTIVE, 20 INDUCTIVE LOADS 0 1.4 0 0.1 0.2 0.3 0.4 RMS ON-STATE CURRENT (A) BCR08AM-14 LOW POWER USE TYPICAL EXAMPLE 100 120 140 710 0.5 0.6 0.7 ...
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... TYPICAL EXAMPLE 140 120 100 –60 –40 – 100120 140 JUNCTION TEMPERATURE ( C) MITSUBISHI SEMICONDUCTOR TRIAC BCR08AM-14 LOW POWER USE PLANAR PASSIVATION TYPE REPETITIVE PEAK OFF-STATE CURRENT VS. JUNCTION TEMPERATURE TYPICAL EXAMPLE ...
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... GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH RGT III RGT III FGT I I RGT GATE CURRENT PULSE WIDTH ( BCR08AM-14 LOW POWER USE TYPICAL EXAMPLE Mar.2002 ...