BCR08AS Powerex, Inc., BCR08AS Datasheet

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BCR08AS

Manufacturer Part Number
BCR08AS
Description
Low Power Use Non-insulated Type, Planar Passivation Type
Manufacturer
Powerex, Inc.
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BCR08AS-12A-T13
Quantity:
350
Part Number:
BCR08AS-8P-T13
Manufacturer:
MIT
Quantity:
20 000
Part Number:
BCR08AS12AUL-B11
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
APPLICATION
Hybrid IC, solid state relay,
control of household equipment such as electric fan · washing machine,
other general purpose control applications
MAXIMUM RATINGS
V
V
I
I
I
P
P
V
I
T
T
1. Gate open.
T (RMS)
TSM
2 t
GM
BCR08AS
DRM
DSM
GM
G (AV)
GM
j
stg
• I
• V
• I
• I
Symbol
Symbol
T (RMS)
FGT !
FGT #
DRM
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
RMS on-state current
Surge on-state current
I
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Weight
2 t
....................................................................... 600V
, I
..................................................................... 10mA
for fusing
..................................................................... 0.8A
RGT !
, I
Parameter
Parameter
RGT #
.............................................. 5mA
1
1
Commercial frequency, sine full wave 360 conduction, T
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
Conditions
12 (marked “BF”)
MITSUBISHI SEMICONDUCTOR TRIAC
Voltage class
600
720
OUTLINE DRAWING
a
1.5±0.1 1.5±0.1
=40 C
2
1
1
(Back side)
0.5±0.07
1.6±0.2
4.4±0.1
BCR08AS
2
3
3
0.4±0.07
SOT-89
3
LOW POWER USE
–40 ~ +125
–40 ~ +125
1
2
3
Ratings
0.26
0.8
0.1
T
T
GATE TERMINAL
48
1
2
8
1
6
1
TERMINAL
TERMINAL
0.4
1.5±0.1
+0.03
–0.05
Dimensions
Mar. 2002
in mm
Unit
Unit
A
mg
W
W
V
V
A
A
V
A
2
C
C
s

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BCR08AS Summary of contents

Page 1

... Conditions Commercial frequency, sine full wave 360 conduction, T 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value BCR08AS LOW POWER USE Dimensions in mm 4.4±0.1 1.5±0.1 1.6±0 0.5± ...

Page 2

... =125 C, V =1/ DRM 3 Junction to case 4 T =125 125° 25° MITSUBISHI SEMICONDUCTOR TRIAC BCR08AS LOW POWER USE Limits Min. Typ. Max. — — 1.0 — — 2.0 — — 2.0 — — 2.0 — — 2.0 — — 2.0 — — ...

Page 3

... CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 140 NATURAL CONVECTION 120 100 2.0 0 0.2 0.4 0.6 RMS ON-STATE CURRENT (A) BCR08AS LOW POWER USE TYPICAL EXAMPLE I I FGT I RGT III RGT 100 120 140 ...

Page 4

... MINIMUM 3 CHARAC- 2 TERISTICS VALUE –1 10 – RATE OF DECAY OF ON-STATE COMMUTATING CURRENT (A/ms) BCR08AS LOW POWER USE TYPICAL EXAMPLE 100 120 140 TYPICAL EXAMPLE 100120 140 TYPICAL EXAMPLE T = 125 500 200V D ...

Page 5

... GATE CURRENT PULSE WIDTH (µs) MITSUBISHI SEMICONDUCTOR TRIAC NON-INSULATED TYPE, PLANAR PASSIVATION TYPE GATE TRIGGER CHARACTERISTICS TEST CIRCUITS TEST PROCEDURE TEST PROCEDURE 3 BCR08AS LOW POWER USE TEST PROCEDURE TEST PROCEDURE 4 Mar. 2002 ...

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