STP4435A Stanson Technology Co., Ltd., STP4435A Datasheet

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... DESCRIPTION STP4435A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as LCD backlight, notebook computer power management, and other battery powered circuits ...

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... P Channel Enhancement Mode MOSFET Symbol V DSS V GSS T =25℃ =70 ℃ =25℃ =70 ℃ STG R θ JA STP4435A 10A - Typical Unit -30 V ± -10.0 A -7.0 -50 A -2.3 A 2.8 W 1.8 -55/150 ℃ -55/150 ℃ 70 ℃ /W Copyright © 2007, Stanson Corp. STP4435A 2007. V1 ...

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... =-1.0A,V =-10V D GEN R =6 Ω d(off) tf STP4435A 10A - Min Typ Max Unit -30 V -1.0 -3.0 V ± 100 -40 A 0.022 Ω 0.030 24 S -0.8 -1 2.3 nC 4.5 1650 pF 350 235 110 35 80 Copyright © 2007, Stanson Corp. STP4435A 2007. V1 ...

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... TYPICAL CHARACTERICTICS (25℃ Unless Note) STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com STP4435A P Channel Enhancement Mode MOSFET Copyright © 2007, Stanson Corp. STP4435A 2007. V1 10A - ...

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... TYPICAL CHARACTERICTICS (25℃ Unless Note) STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com STP4435A P Channel Enhancement Mode MOSFET Copyright © 2007, Stanson Corp. STP4435A 2007. V1 10A - ...

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... SOP-8 PACKAGE OUTLINE STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com STP4435A P Channel Enhancement Mode MOSFET Copyright © 2007, Stanson Corp. STP4435A 2007. V1 10A - ...