40HFR160M Naina Semiconductor, 40HFR160M Datasheet

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40HFR160M

Manufacturer Part Number

40HFR160M

Description

SILICON POWER DIODES

Manufacturer

Naina Semiconductor

Datasheet

1.40HFR160M.pdf (1 pages)

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FEATURES

•

•

•

•

* Available in metric and UNF thread

ELECTRICAL SPECIFICATIONS

THERMAL MECHANICAL SPECIFICATIONS

I

V

I

I

I 2 tMaximum I 2 t rating (non-rep.)

F(AV)

FRM

FRM

TYPE

V

V

V

I

R(AV)

FM

ELECTRICAL RATINGS

RRM

R(RMS)

R

All Diffused Series

Available in Normal & Reverse Polarity

Industrial Grade

Available In Avalanche Characteristic

Tj

T

W

stg

JC

Maximum Average Forward

Current Te=140

Maximum peak forward

voltage drop @ Rated IF(AV)

Maximum peak one cycle

(non-rep) surge current 10 m sec

Maximum peak repetitive

surge current

for 5 to 10 m sec

SILICON POWER DIODES

40HF/40HFR

Max. repetitive peak reverse

voltage (v)

Max. R.M.S. reverse voltage (V)

Max. D.C. Blocking Voltage (V)

Recommended R.M.S. working

Voltage(v)

Max. Average reverse leakage

current @ VRMM Tc 25

40HF/HFR

Maximum thermal resistance Junction to case

Operating Junction Temp.

Storage temperature

Mounting torque

(Non-lubricated threads)

Approx, weight

0

C

e-mail: sales@nainasemi.com, web site :www.nainasemi.com

0

C uA

NAINA SEMICONDUCTOR LTD

1200A 2 Sec

D95,SECTOR 63,NOIDA(INDIA)

500 A

200 A

1.2V

40A

100

100

200

10

70

40

20

200

140

200

80

200

400

280

400

160

200

40

40 HF/ HFR

600

420

600

240

200

60

1

-65

-65

0.4 M-kg min,

0.6 M-kg max

13.5 & 30 gms.

0

C/W

0

0

C to 150

C to 200

800

560

800

320

200

80

Normal

Normal

POLARITY

POLARITY

A

C

A

C

1000

1000

0

100

700

400

200

Reverse

0

C

DO-5

Reverse

C

C

A

C

A

M8 x 1.25

17 A/F

Ø 8.0

17 A/F

Ø 4.0

1200

1200

120

840

480

200

NAINA

7

M 8 x 1.25

16

1400 1600

1400 1600

12

12

140

980

560

200

11.5

32

11.5

27

1120

160

640

200

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