MD16R1624DF0 Samsung Semiconductor, Inc., MD16R1624DF0 Datasheet - Page 2

• Manufacturer Part Number: MD16R1624DF0
• Description: Description = MD16R1624(8/G)DF0, MD18R1624(8/G)DF0 (16Mx16)*4(8/16)pcs RIMM(TM) Module Based on 256Mb D-die, 32s Banks,16K/32ms Ref, 2.5V ;; Density(MB) = 128 ;; Organization = 32Mx32 ;; Component Composition = 256M(5th)x4 ;; Voltage(V) = 2.5 ;; Refr
• Manufacturer: Samsung Semiconductor, Inc.

(16Mx16)*4(8/16)pcs RIMM
(16Mx18)*4(8/16)pcs RIMM
MD16R1624(8/G)DF0 - CN1 for 1200MHz
MD18R1624(8/G)DF0 - CN1 for 1200MHz
Overview
The 32 bit RIMM
mance line of memory modules suitable for use in a broad
range of applications including computer memory, personal
computers, workstations, and other applications where high
bandwidth and low latency are required.
The 32 bit RIMM module consists of 256Mb/288Mb
RDRAM
DRAMs organized as 16M words by 16 or 18 bits. The use
of Rambus Signaling Level (RSL) technology permits the
use of conventional system and board design technologies.
RIMM 4800 modules support 1200MHz transfer rate per
pin, resulting in total module bandwidth of 4800MB/s or
4.8GB/s.
The 32 bit RIMM module provides two independent 16 or 18
bit memory channels to facilitate compact system design.
The "Thru" Channel enters and exits the module to support a
connection to or from a controller, memory slot, or termina-
tion. The "Term" Channel is terminated on the module and
supports a connection from a controller or another memory
slot.
The RDRAM architecture enables the highest sustained
bandwidth for multiple, simultaneous, randomly addressed
memory transactions. The separate control and data buses
with independent row and column control yield over 95%
bus efficiency. The RDRAM device multi-bank architecture
supports up to four simultaneous transactions per device.
Features
terminated on 32 bit RIMM module
(5.25” x 1.375” x 0.05”)
on each 512/576MB, 256/288MB, 128/144MB module respec-
tively
Each RDRAM has 32 banks, for a total of 512, 256, 128 banks
Gold plated edge connector pad contacts
2 Independent RDRAM channels, 1 pass through and 1
High speed 1200MHz RDRAM devices
232 edge connector pads with 1mm pad spacing
Module PCB size: 133.35mm x 34.93mm x 1.27mm
Serial Presence Detect (SPD) support
Operates from a 2.5 volt supply ( ±5%)
Low power and powerdown self refresh modes
Separate Row and Column buses for higher efficiency
WBGA package (92 balls)
®
devices. These are extremely high-speed CMOS
®
module is a general purpose high-perfor-
Note: On double sided modules, RDRAMs are also installed on bottom side of PCB.
Figure 1 : 32 bit RIMM module with heat spreader removed
TM
TM
Module based on 256Mb D-die, 32s banks,16K/32ms Ref, 2.5V
Module based on 288Mb D-die, 32s banks,16K/32ms Ref, 2.5V
Page 1
Key Timing Parameters
The following table lists the frequency and latency bins
available for 32 bit RIMM modules.
Form Factor
The 32 bit RIMM modules are offered in 232-pad 1mm edge
connector pad pitch suitable for 232 contact RIMM connec-
tors. Figure 1 below, shows a sixteen device 32 bit RIMM
module.
Table 1: 32 bit RIMM Module Frequency and Latency
RIMM 4800
Organi-
128M x
zation
32M x
64M x
32/36
32/36
32/36
Version 1.0 January 2003
32 Bit RIMM
I/O Freq.
1200MHz
(MHz)
Speed
Access
Time)
(Row
t
RAC
ns
32
32
32
MD16/18R162GDF0-CN1
MD16/18R1624DF0-CN1
MD16/18R1628DF0-CN1
Part Number
®
Module