MD18R3268AG0 Samsung Semiconductor, Inc., MD18R3268AG0 Datasheet - Page 10

• Manufacturer Part Number: MD18R3268AG0
• Description: Description = MD18R3268AG0 (32Mx18)x8(16)pcs RIMM(TM) Module Based on 576Mb A-die, 32s Banks,32K/32ms Ref, 2.5V ;; Density(MB) = 512 ;; Organization = 128Mx36 ;; Component Composition = 576M(2th)x8 ;; Voltage(V) = 2.5 ;; Refresh = 32K/32ms ;; Speed(M
• Manufacturer: Samsung Semiconductor, Inc.

MD18R3268(G)AG0
32 bit RIMM Module Current Profile
a. Actual power will depend on memory controller and usage patterns. Power does not include Refresh Current.
b. I/O current is a function of the % of 1’s, to add I/O power for 50% 1’s for a X16 need to add 257mA or 290mA for X18 ECC module for the follow-
ing: V
I
I
I
I
I
I
DD1
DD2
DD3
DD4
DD5
DD6
I
DD
DD
= 2.5V, V
One RDRAM device per channel in Read
balance in NAP mode
One RDRAM device per channel in Read
balance in Standby mode
One RDRAM device per channel in Read
balance in Active mode
One RDRAM device per channel in Write,
balance in NAP mode
One RDRAM device per channel in Write,
balance in Standby mode
One RDRAM device per channel in Write,
balance in Active mode
TERM
32 bit RIMM module power conditions
= 1.8V, V
Total 32 bit RIMM Module Capacity
REF
= 1.4V and V
Table 7 : 32bit RIMM Module Current Profile
DIL
= V
b
b
b
,
,
,
REF
- 0.5V.
RIMM 4800
RIMM 4200
RIMM 3200
RIMM 4800
RIMM 4200
RIMM 3200
RIMM 4800
RIMM 4200
RIMM 3200
RIMM 4800
RIMM 4200
RIMM 3200
RIMM 4800
RIMM 4200
RIMM 3200
RIMM 4800
RIMM 4200
RIMM 3200
a
Page 9
1152MB
1976
1856
1496
3460
3340
2770
4230
4040
3330
2016
1916
1516
3500
3400
2790
4270
4100
3350
Max
32 Bit RIMM
Version 0.1 Sept. 2003
576MB
1944
1824
1464
2580
2460
2010
2910
2760
2250
1984
1884
1484
2620
2520
2030
2950
2820
2270
Max
Preliminary
®
Module
Unit
mA
mA
mA
mA
mA
mA