MD18R3268AG0 Samsung Semiconductor, Inc., MD18R3268AG0 Datasheet - Page 9

• Manufacturer Part Number: MD18R3268AG0
• Description: Description = MD18R3268AG0 (32Mx18)x8(16)pcs RIMM(TM) Module Based on 576Mb A-die, 32s Banks,32K/32ms Ref, 2.5V ;; Density(MB) = 512 ;; Organization = 128Mx36 ;; Component Composition = 576M(2th)x8 ;; Voltage(V) = 2.5 ;; Refresh = 32K/32ms ;; Speed(M
• Manufacturer: Samsung Semiconductor, Inc.

MD18R3268(G)AG0
Absolute Maximum Ratings
DC Recommended Electrical Conditions
a. see Direct RDRAM datasheet for more details
32 bit RIMM Module Capacity and Number of RDRAM device
V
V
T
T
V
V
V
SVdd
V
V
Number of 576Mb RDRAM Devices
STORE
PLATE
I,ABS
DD,ABS
DD
CMOS
REF
TERM
TERM
Symbol
Symbol
V
REF
Voltage applied to any RSL or CMOS signal pad with respect to Gnd
Voltage on VDD with respect to Gnd
Storage temperature
Plate temperature
Supply voltage
CMOS I/O power supply at pad for 2.5V controllers
CMOS I/O power supply at pad for 1.8V controllers
Reference voltage
Serial Presence Detector- positive power supply
Termination Voltage
Nominal RSL signal half swing
Table 6: 32 bit RIMM Module Capacity and Number of RDRAM device
a
a
Parameter and Conditions
Table 5 : DC Recommended Electrical Conditions
Table 4 : Absolute Maximum Ratings
Parameter
channel 1
channel 2
Page 8
1152MB
16
8
8
2.50 - 0.13
1.8 - 0.09
32 Bit RIMM
1.8 - 0.1
1.4 - 0.2
Min
- 0.3
- 0.5
- 50
VDD
Min
-
2.2
-
Version 0.1 Sept. 2003
576MB
8
4
4
V
V
DD
DD
Max
2.50 + 0.13
100
1.8 + 0.09
92
1.8 + 0.2
1.4 + 0.2
Preliminary
+ 0.3
+ 1.0
VDD
Max
0.46
3.6
®
Module
V
V
°C
°C
Unit
pcs
Unit
Unit
V
V
V
V
V
V
V