Si7401DN Vishay Intertechnology, Si7401DN Datasheet

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Si7401DN

Manufacturer Part Number
Si7401DN
Description
P-channel 20-V (D-S) MOSFET
Manufacturer
Vishay Intertechnology
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
Si7401DN-T1
Manufacturer:
VIA
Quantity:
6
Part Number:
Si7401DN-T1-E3
Manufacturer:
SEIKO
Quantity:
3 123
Part Number:
Si7401DN-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes
a.
Document Number: 71423
S-03311—Rev. A, 26-Mar-01
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Case
V
Surface Mounted on 1” x 1” FR4 Board.
i
DS
- 20
(V)
J
8
ti
Ordering Information: Si7401DN-T1
3.30 mm
D
t A bi
7
D
6
D
0.028 @ V
0.034 @ V
0.021 @ V
J
J
a
a
PowerPAK 1212-8
= 150_C)
= 150_C)
t
Bottom View
a
a
5
D
r
Parameter
Parameter
DS(on)
GS
GS
GS
a
a
1
= - 2.5 V
= - 1.8 V
= - 4.5 V
S
(W)
P-Channel 20-V (D-S) MOSFET
2
S
a
3
S
3.30 mm
4
G
A
= 25_C UNLESS OTHERWISE NOTED)
Steady State
Steady State
t v 10 sec
T
T
T
T
I
A
A
A
A
D
- 9.8
- 8.9
- 11
= 25_C
= 85_C
= 25_C
= 85_C
(A)
P-Channel MOSFET
G
Symbol
Symbol
T
R
R
R
FEATURES
D TrenchFETr Power MOSFETS: 1.8-V Rated
D New PowerPAKr Package
APPLICATIONS
D Load/Power Switching In Cell Phones and Pagers
D PA Switch for Cellular Devices
D Battery Operated Systems
J
V
V
I
P
P
, T
thJC
DM
thJA
I
I
I
GS
DS
D
D
S
D
D
D
stg
- Low Thermal Resistance, R
- Low 1.07-mm Profile
S
D
S S
D
D
10 secs
Typical
- 8.2
- 3.2
- 11
3.8
2.0
1.9
26
65
- 55 to 150
- 20
"8
- 30
Steady State
Maximum
Vishay Siliconix
- 7.3
- 5.2
- 1.3
1.5
0.8
2.4
33
81
thJC
Si7401DN
www.vishay.com
Unit
Unit
_C/W
_C
C/W
W
W
V
V
A
A
1

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