Si7403DN Vishay Intertechnology, Si7403DN Datasheet
Si7403DN
Manufacturer Part Number
Si7403DN
Description
P-channel 20-V (D-S) MOSFET
Manufacturer
Vishay Intertechnology
Datasheet
1.SI7403DN.pdf
(4 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
Si7403DN-T1-E3
Manufacturer:
IDT
Quantity:
4 000
Part Number:
Si7403DN-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes
a.
Document Number: 71431
S-03390—Rev. A, 02-Apr-01
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient
Maximum Junction-to-Case
V
Surface Mounted on 1” x 1” FR4 Board.
DS
–20
(V)
8
3.30 mm
D
7
D
6
PowerPAKt 1212-8
D
0.135 @ V
J
a
0.1 @ V
= 150_C)
Bottom View
a
5
D
r
Parameter
Parameter
DS(on)
_
GS
GS
a
a
1
= –4.5 V
= –2.5 V
S
(W)
P-Channel 20-V (D-S) MOSFET
2
a
S
3
S
3.30 mm
4
G
Steady State
Steady State
t v 10 sec
T
T
T
T
I
New Product
A
A
A
A
D
–4.5
–3.8
= 25_C
= 85_C
= 25_C
= 85_C
(A)
_
Symbol
Symbol
T
R
R
J
V
V
I
P
, T
thJC
DM
thJA
I
I
GS
DS
D
S
D
stg
D TrenchFETr Power MOSFETS: 2.5-V Rated
D New PowerPAKt Package
D Load Switching
D PA Switching
P-Channel MOSFET
– Low Thermal Resistance, R
– Low 1.07-mm Profile
10 secs
Typical
–4.5
–3.2
–3.0
3.5
1.9
4.5
28
65
G
–55 to 150
D
–20
–20
S
"8
D
Steady State
Maximum
Vishay Siliconix
S S
D
–2.9
–2.1
–1.3
1.5
0.8
5.6
35
81
D
Si7403DN
thJC
www.vishay.com
Unit
Unit
_C/W
_C
C/W
W
V
A
1
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