Si7425DN Vishay Intertechnology, Si7425DN Datasheet

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Si7425DN

Manufacturer Part Number
Si7425DN
Description
P-channel 12-V (D-S) MOSFET
Manufacturer
Vishay Intertechnology
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
Si7425DN-T1-E3
Manufacturer:
VISHAY
Quantity:
464
Part Number:
Si7425DN-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
Si7425DN-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes
a.
Document Number: 72400
S-32411—Rev. B, 24-Nov-03
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Case
V
Surface Mounted on 1” x 1” FR4 Board.
i
DS
−12
(V)
J
8
ti
3.30 mm
Ordering Information: Si7425DN-T1—E3
D
t A bi
7
D
6
D
0.022 @ V
0.029 @ V
0.016 @ V
PowerPAKr 1212-8
J
J
a
a
= 150_C)
= 150_C)
t
Bottom View
a
a
5
D
r
Parameter
Parameter
DS(on)
GS
GS
GS
a
a
1
= −2.5 V
= −1.8 V
= −4.5 V
S
(W)
P-Channel 12-V (D-S) MOSFET
2
a
S
3
S
3.30 mm
4
G
A
= 25_C UNLESS OTHERWISE NOTED)
Steady State
Steady State
t v 10 sec
T
T
T
T
I
New Product
A
A
A
A
D
−12.6
−10.8
−3.5
= 25_C
= 85_C
= 25_C
= 85_C
(A)
G
Symbol
Symbol
T
P-Channel MOSFET
R
R
R
FEATURES
D TrenchFETr Power MOSFETS: 1.8-V Rated
D New PowerPAKr Package
APPLICATIONS
D Load Switch
D PA Switch
D Battery Switch
J
V
V
I
P
P
, T
thJC
DM
thJA
I
I
I
GS
DS
D
D
S
D
D
stg
− Low Thermal Resistance, R
− Low 1.07-mm Profile
S
D
10 secs
Typical
−12.6
−9.1
−3.0
3.6
1.9
2.9
28
65
−55 to 150
−12
−25
"8
Steady State
Maximum
Vishay Siliconix
−8.3
−6.0
−1.3
1.5
0.8
3.8
35
81
thJC
Si7425DN
www.vishay.com
Unit
Unit
_C/W
_C
C/W
W
W
V
V
A
A
1

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