XP121M Panasonic Industrial Company/Electronic Components, XP121M Datasheet
XP121M
Manufacturer Part Number
XP121M
Description
Marking = em ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 2.2 ;; R2(Tr2)(kW ) = 0.047 ;; Package = SMini5-F1
Manufacturer
Panasonic Industrial Company/Electronic Components
Datasheet
1.XP121M.pdf
(3 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
XP121M-(TX)
Manufacturer:
HIROSE
Quantity:
1 000
Composite Transistors
XP0121M
Silicon NPN epitaxial planar type
For switching/digital circuits
■ Features
■ Basic Part Number
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: June 2003
• Two elements incorporated into one package
• Reduction of the mounting area and assembly cost by one half
• UNR221M × 2
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
h
Collector-emitter saturation voltage
Output voltage high-level
Output voltage low-level
Input resistance
Resistance ratio
Transition frequency
(Emitter-coupled transistors with built-in resistor)
FE
Ratio
2. * : Ratio between 2 elements
*
Parameter
Parameter
a
Symbol
= 25°C ± 3°C
V
V
Symbol
h
T
V
R
P
I
T
V
V
FE(Small
CBO
CEO
/Large)
a
I
I
I
V
V
C
stg
1
CE(sat)
T
h
CBO
CEO
EBO
R
j
f
CBO
CEO
= 25°C
FE
OH
/ R
OL
T
1
2
−55 to +150
Rating
I
I
V
V
V
V
V
I
V
V
V
C
C
C
100
150
150
CB
CE
EB
CE
CE
CC
CC
CB
50
50
= 10 µA, I
= 2 mA, I
= 10 mA, I
SJJ00235BED
= 50 V, I
= 6 V, I
= 10 V, I
= 10 V, I
= 50 V, I
= 5 V, V
= 5 V, V
= 10 V, I
B
C
E
Conditions
B
B
Unit
mW
B
C
C
B
E
E
mA
= 0
= 0
°C
°C
V
V
= 0
= 0.5 V, R
= 2.5 V, R
= 0
= 0
= 5 mA
= 5 mA
= 0.3 mA
= −2 mA, f = 200 MHz
L
L
= 1 kΩ
= 1 kΩ
Marking Symbol: EM
Internal Connection
1: Base (Tr1)
2: Emitter
3: Base (Tr2)
EIAJ: SC-88A
10˚
(0.65) (0.65)
0.20
1
5
1.3
2.0
±0.05
±0.1
±0.1
−30%
0.50
Min
2
4.9
Tr1
50
50
80
5
1
4
3
0.047
0.99
Typ
150
2.2
2
4: Collector (Tr2)
5: Collector (Tr1)
SMini5-G1 Package
Tr2
+30%
4
3
Max
0.25
0.12
0.1
0.5
0.2
0.2
+0.05
–0.02
Unit: mm
MHz
Unit
mA
µA
µA
kΩ
V
V
V
V
V
1
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Marking = 7Q ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 10 ;; R2(Tr2)(kW ) = ;; Package = SMini5-G1
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