LED1200-35M32

Manufacturer Part NumberLED1200-35M32
DescriptionStem type LED with high Output powe
ManufacturerETC
LED1200-35M32 datasheet
 


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LED1200-35M32
LED1200-35M32 is an InGaAsP LED mounted on a TO-18 stem with a spherical glass lens
being designed for high output power uses. On forward bias, it emits a spectral band of
radiation, which peaks at 1200nm.
♦Features
1) High radiated intensity
2) High Reliability
♦Specifications
1) Product Name
NIR LED Lamp
2) Type No.
LED1200-35M32
3) Chip Spec.
InGaAs/InP
(1) Material
(2) Peak Wavelength
1200 nm
4) Package
(1) Type
TO-18 stem
(2) Lens
Spherical glass lens
(3) Cap
Gold plated
♦Absolute Maximum Ratings
Item
Power Dissipation
Forward Current
Pulse Forward Current
Reverse Voltage
Operating Temperature
Storage Temperature
Soldering Temperature
Pulse Forward Current condition: Duty = 1% and Pulse Width = 10 µs.
Soldering condition : Soldering condition must be completed within 3 seconds at 260°C
♦Electro-Optical Characteristics
Item
Symbol
Forward Voltage
V
Reverse Current
I
Total Radiated Power
P
λ
Peak Wavelength
∆λ
Half Width
θ
Viewing Half Angle
Rise Time
Fall Time
‡Radiated Power is measured by Ando Optical Multi Meter AQ2140 & AQ2742
Stem type LED with high output power
Symbol
Maximum Rated Value
P
120
D
I
100
F
I
1000
FP
V
3
R
T
-20 ~ +90
OPR
T
-30 ~ +100
STG
T
260
SOL
Condition
Minimum
I
= 20 mA
F
F
V
= 3 V
R
R
I
= 20 mA
0.8
O
F
1150
I
= 20 mA
F
P
I
= 20 mA
F
I
= 20 mA
1/2
F
tr
I
= 20 mA
F
tf
I
= 20 mA
F
♦Outer dimension [Unit:mm]
Unit
Ambient Temperature
mW
Ta = 25 °C
mA
Ta = 25 °C
mA
Ta = 25 °C
V
Ta = 25 °C
°C
°C
°C
Typical
Maximum
Unit
0.8
1.3
V
10
uA
1.8
mW
1200
1250
nm
100
nm
±15
deg.
10
ns
10
ns