LED1200-35M32 ETC, LED1200-35M32 Datasheet

LED1200-35M32

Manufacturer Part Number

LED1200-35M32

Description

Stem type LED with high Output powe

Manufacturer

ETC

Datasheet

1.LED1200-35M32.pdf (1 pages)

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1) High radiated intensity

2) High Reliability

1) Product Name

2) Type No.

3) Chip Spec.

(1) Material

(2) Peak Wavelength

4) Package

(1) Type

(2) Lens

(3) Cap

Forward Voltage

Reverse Current

Total Radiated Power

Peak Wavelength

Half Width

Viewing Half Angle

Rise Time

Fall Time

LED1200-35M32

LED1200-35M32 is an InGaAsP LED mounted on a TO-18 stem with a spherical glass lens

being designed for high output power uses. On forward bias, it emits a spectral band of

radiation, which peaks at 1200nm.

♦Features

♦Specifications

♦Absolute Maximum Ratings

♦Electro-Optical Characteristics

Power Dissipation

Forward Current

Pulse Forward Current

Reverse Voltage

Operating Temperature

Storage Temperature

Soldering Temperature

‡

Pulse Forward Current condition: Duty = 1% and Pulse Width = 10 µs.

Soldering condition : Soldering condition must be completed within 3 seconds at 260°C

‡Radiated Power is measured by Ando Optical Multi Meter AQ2140 & AQ2742

Item

NIR LED Lamp

LED1200-35M32

InGaAs/InP

1200 nm

TO-18 stem

Spherical glass lens

Gold plated

Symbol

∆λ

1/2

Symbol

OPR

STG

SOL

Condition

= 20 mA

= 3 V

Maximum Rated Value

Stem type LED with high output power

-30 ~ +100

-20 ~ +90

Minimum

1000

120

100

260

1150

0.8

Typical

1200

♦Outer dimension [Unit:mm]

100

±15

0.8

1.8

Unit

°C

Maximum

Ambient Temperature

1250

1.3

Ta = 25 °C

deg.

Unit

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