C67070-A2007-A70 Siemens (acquired by Infineon Technologies Corporation), C67070-A2007-A70 Datasheet

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C67070-A2007-A70

Manufacturer Part Number
C67070-A2007-A70
Description
Igbt Power Module ( Single Switch Including Fast Free-wheeling Diodes Enlarged Diode Area )
Manufacturer
Siemens (acquired by Infineon Technologies Corporation)
Datasheet
IGBT Power Module
Preliminary data
Semiconductor Group
• Single switch
• Including fast free-wheeling diodes
• Enlarged diode area
• Package with insulated metal base plate
Type
BSM300GA120DN2E3166
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
R
Gate-emitter voltage
DC collector current
T
T
Pulsed collector current, t
T
T
Power dissipation per IGBT
T
Chip temperature
Storage temperature
Thermal resistance, chip case
Diode thermal resistance, chip case
Insulation test voltage, t = 1min.
Creepage distance
Clearance
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
C
C
C
C
C
GE
= 25 °C
= 80 °C
= 25 °C
= 80 °C
= 25 °C
= 20 k
p
= 1 ms
V
1200V 430A
CE
I
C
1
Package
SINGLE SWITCH 1
Symbol
V
V
V
I
I
P
T
T
R
R
V
-
-
-
-
C
Cpuls
j
stg
CE
CGR
GE
tot
is
thJC
thJCD
BSM300GA120DN2E3166
55 / 150 / 56
-55 ... + 150
Values
Ordering Code
C67070-A2007-A70
+ 150
± 20
1200
1200
2500
2500
0.065
430
300
860
600
F
0.05
20
11
Mar-29-1996
Unit
V
A
W
°C
K/W
Vac
mm
-

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