R5009ANJTL ROHM Electronics, R5009ANJTL Datasheet
R5009ANJTL
Manufacturer Part Number
R5009ANJTL
Description
10V Drive Nch MOSFET; Package: LPTS; Constitution materials list: Packing style: taping; Package quantity: 1000;
Manufacturer
ROHM Electronics
Datasheet
1.R5009ANJTL.pdf
(6 pages)
10V Drive Nch MOSFET
Silicon N-channel MOSFET
1) Low on-resistance.
2) Fast switching speed.
3) Wide SOA (safe operating area).
4) Gate-source voltage (V
5) Drive circuits can be simple.
6) Parallel use is easy.
Switching
∗1 Pw≤10µs, Duty cycle≤1%
∗2 L 500µH, V
∗3 Limited only by maximum tempterature allowed
○
Channel to case
c
www.rohm.com
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Avalanche Current
Avalanche Energy
Total power dissipation (Tc=25°C)
Channel temperature
Range of storage temperature
Type
R5009ANJ
Structure
Features
Applications
Packaging specifications
Absolute maximum ratings (Ta=25°C)
Thermal resistance
R5009ANJ
2009 ROHM Co., Ltd. All rights reserved.
Package
Code
Basic ordering unit (pieces)
DD
Parameter
=50V, R
Parameter
G
=25Ω, Starting, Tch=25°C
Continuous
Pulsed
Continuous
Pulsed
GSS
) guaranteed to be ±30V.
Symbol
V
V
Taping
Tstg
Tch
E
1000
I
I
I
P
DSS
GSS
I
I
DP
SP
AS
TL
AS
D
S
D
Rth(ch-c)
Symbol
∗3
∗1
∗1
∗2
∗2
−55 to +150
Limits
500
150
±36
4.5
5.4
30
±9
36
50
9
Limits
2.5
Unit
mJ
1/5
°C
°C
W
V
V
A
A
A
A
A
°C/W
Unit
Dimensions (Unit : mm)
Inner circuit
(1) Base (Gate)
(2) Collector (Drain)
(3) Emitter (Source)
(1) Gate
(2) Drain
(3) Source
LPTS
(1)
(1)
2.54
(2)
10.1
1.24
5.08
(2)
(3)
∗1 Body Diode
∗1
0.78
Each lead has same dimensions
(3)
4.5
0.4
2.7
1.3
2009.02 - Rev.A
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