NTE2023 NTE Electronics, Inc., NTE2023 Datasheet
NTE2023
Manufacturer Part Number
NTE2023
Description
NTE2023, Integrated Circuit General Purpose, High Current
Manufacturer
NTE Electronics, Inc.
Datasheet
1.NTE2023.pdf
(2 pages)
Description:
The NTE2023 is a general purpose high current transistor array in a 16–Lead DIP type package com-
prised of seven high current silicon NPN transistor on a common monolithic substrate. It is connected
in a common–collector configuration.
Absolute Maximum Ratings:
Power Dissipation (Any One Transistor), P
Operating Ambient Temperature Range, T
Individual Transistor Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Collector–Substrate Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Base Current, I
Note 1. The collector of each transistor in the NTE2023 is isolated from the substrate by an integral
Electrical Characteristics: (T
Collector–Emitter Breakdown Voltage
Collector–Substrate Breakdown Voltage
Collector–Emitter Breakdown Voltage V
Emitter–Base Breakdown Voltage
Forward Current Transfer Ratio
diode. The substrate must be connected to a voltage which is more negative than any collec-
tor voltage so as to maintain isolation between transistors, and to provide normal transistor
action. Undesired coupling between transistors is avoided by maintaining the substrate (5)
at either DC or signal (AC) ground. An appropriate bypass capacitor can be used to establish
a signal ground.
Parameter
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EBO
CBO
General Purpose, High Current
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
A
7–Segment Display Driver
CIO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Integrated Circuit
V
V
Symbol
V
(BR)CEO
(BR)EBO
(BR)CES
(BR)CIE
h
FE
opr
D
NTE2023
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I
I
I
I
V
V
C
CI
C
C
CE
CE
= 500 A
= 1mA
= 500 A
= 500 A
= 0.5V, I
= 0.8V, I
Test Conditions
C
C
= 50mA
= 30mA
Min
20
20
16
30
40
5
Typ
80
80
40
80
85
7
–40 to +85 C
Max Unit
–
–
–
–
–
–
500mW
200mA
20mA
V
V
V
V
16V
20V
20V
5V
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NTE2023 Summary of contents
Page 1
... B Note 1. The collector of each transistor in the NTE2023 is isolated from the substrate by an integral diode. The substrate must be connected to a voltage which is more negative than any collec- tor voltage maintain isolation between transistors, and to provide normal transistor action ...
Page 2
Electrical Characteristics (Cont’d): (T Parameter Base–Emitter Saturation Voltage Collector–Emitter Saturation Voltage Collector Cutoff Current 16 = +25 C unless otherwise specified) A Symbol Test Conditions 30mA BE(sat 30mA V C CE(sat 50mA ...