NTE812 NTE Electronics, Inc., NTE812 Datasheet
NTE812
Manufacturer Part Number
NTE812
Description
NTE812, Integrated Circuit Audio Power Amplifier, 1W
Manufacturer
NTE Electronics, Inc.
Datasheet
1.NTE812.pdf
(2 pages)
Description:
The NTE812 is a monolithic integrated circuit in a 14–Lead DIP type package designed for use in driver
and power amplifier applications at frequencies from 50Hz to 40kHz. This device will deliver up to 1W
RMS output power into an 8 load. The high input impedance and low standby current provide excellent
low–power audio output performance for portable applications. The high peak current capability can
be utilized for direct driving of complementary power transistors in high power amplifier applications.
Features:
D 1 Watt RMS Power into 8
D Peak Output Current: 1A
D Wide Supply Voltage Range: 4V to 13V
D High Input Impedance
Applications:
D Radios
D Phonographs
D Portable Communications Receivers
D Complementary Power Amplifier Drivers
D Servo Drivers
Absolute Maximum Ratings: (T
Supply Voltage (Note 1), V
Output Current, I
Continuous Power Dissipation (T
Operating Ambient Temperature Range, T
Storage Temperature Range, T
Lead Temperature (During Soldering, 1/16” from case, 10sec), T
Note 1. Voltage values are with respect to network GND terminal.
Note 2. This rating is valid for the condition that all pins are soldered into a printed circuit board with
Derate Above 25 C
a 2” x 2” copper layer area of 14 mil thickness. Most of the heat is conducted to the printed
circuit board copper layer through Pin8 (Input GND).
O
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Audio Power Amplifier, 1W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
with THD = 0.65% Typ
A
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
+25 C, Note 2), P
Integrated Circuit
opr
NTE812
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
L
. . . . . . . . . . . . . . . . . . . . .
–55 to +100 C
–65 to +150 C
14.7mW/ C
+260 C
1.1W
15V
1A
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NTE812 Summary of contents
Page 1
... Description: The NTE812 is a monolithic integrated circuit in a 14–Lead DIP type package designed for use in driver and power amplifier applications at frequencies from 50Hz to 40kHz. This device will deliver RMS output power into an 8 load. The high input impedance and low standby current provide excellent low– ...
Page 2
Electrical Characteristics: (T Parameter Continuous RMS Power Output Input Voltage Total Harmonic Distortion Efficiency Cutoff Frequency Lower Upper Input Impedance Output Impedance Noise Output Level (Unfiltered) Quiescent Output Voltage Quiescent Supply Current + 12V ...