C5508 NEC, C5508 Datasheet

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C5508

Manufacturer Part Number
C5508
Description
Search -----> 2SC5508
Manufacturer
NEC
Datasheet
Document No. P13865EJ1V0DS00 (1st edition)
Date Published March 1999 N CP(K)
Printed in Japan
www.DataSheet4U.net
FEATURES
• Ideal for low-noise, high-gain amplification applications
• NF = 1.1 dB, G
• Maximum available power gain: MAG = 19 dB TYP. @f = 2 GHz, V
• f
• Flat-lead 4-pin thin super mini-mold (t = 0.59 mm)
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS
THERMAL RESISTANCE
2SC5508
2SC5508-T2
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Junction to Case Resistance
Junction to Ambient Resistance
Remark To order evaluation samples, consult your NEC sales representative (available in 50-pcs units).
Note T
T
= 25 GHz technology
Part Number
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
A
= +25 °C (free air)
FOR LOW NOISE, HIGH-GAIN AMPLIFICATION
a
= 16 dB TYP. @f = 2 GHz, V
Parameter
FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD
Item
Loose product (50 pcs)
Taping product (3 kpcs/reel)
The information in this document is subject to change without notice.
PRELIMINARY DATA SHEET
NPN SILICON RF TRANSISTOR
Quantity
CE
= 2 V, I
Symbol
Symbol
P
R
R
V
V
V
T
tot
I
T
CBO
CEO
EBO
th j-c
th j-a
C
stg
Note
j
C
• 8 mm wide emboss taping
• 1 pin (emitter), 2 pin (collector) feed hole direction
= 5 mA
NPN SILICON RF TRANSISTOR
CE
= 2 V, I
–65 to +150
Ratings
Value
115
150
150
650
3.3
1.5
15
35
C
Packaging Style
= 20 mA
2SC5508
°C/W
°C/W
Unit
mW
Unit
mA
°C
°C
V
V
V
©
1999

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