C5508

Manufacturer Part NumberC5508
DescriptionSearch -----> 2SC5508
ManufacturerNEC
C5508 datasheet
 


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PRELIMINARY DATA SHEET
NPN SILICON RF TRANSISTOR
FOR LOW NOISE, HIGH-GAIN AMPLIFICATION
FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD
FEATURES
• Ideal for low-noise, high-gain amplification applications
• NF = 1.1 dB, G
= 16 dB TYP. @f = 2 GHz, V
a
• Maximum available power gain: MAG = 19 dB TYP. @f = 2 GHz, V
• f
= 25 GHz technology
T
• Flat-lead 4-pin thin super mini-mold (t = 0.59 mm)
ORDERING INFORMATION
Part Number
2SC5508
Loose product (50 pcs)
2SC5508-T2
Taping product (3 kpcs/reel)
Remark To order evaluation samples, consult your NEC sales representative (available in 50-pcs units).
ABSOLUTE MAXIMUM RATINGS
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
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Total Power Dissipation
Junction Temperature
Storage Temperature
Note T
= +25 °C (free air)
A
THERMAL RESISTANCE
Item
Junction to Case Resistance
Junction to Ambient Resistance
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
The information in this document is subject to change without notice.
Document No. P13865EJ1V0DS00 (1st edition)
Date Published March 1999 N CP(K)
Printed in Japan
NPN SILICON RF TRANSISTOR
= 2 V, I
= 5 mA
CE
C
= 2 V, I
CE
Quantity
• 8 mm wide emboss taping
• 1 pin (emitter), 2 pin (collector) feed hole direction
Symbol
Ratings
V
15
CBO
V
3.3
CEO
V
1.5
EBO
I
35
C
Note
P
115
tot
T
150
j
T
–65 to +150
stg
Symbol
Value
R
150
th j-c
R
650
th j-a
2SC5508
= 20 mA
C
Packaging Style
Unit
V
V
V
mA
mW
°C
°C
Unit
°C/W
°C/W
©
1999