MT29F8G08FABWP Micron Technology, Inc, MT29F8G08FABWP Datasheet - Page 19

• Manufacturer Part Number: MT29F8G08FABWP
• Manufacturer: Micron Technology, Inc

Minimum Rp
Figure 11:
Figure 12:
09005aef818a56a7 pdf/ 09005aef81590bdd source
2gb_nand_m29b__2.fm - Rev. H 9/05 EN
READY/BUSY# Open Drain
t
R and
Notes: 1.
t
F
Rp (MIN, 3.3V part) =
V
2.
3.
4.
5. See TC values in Figure 14 on page 20 for approximate Rp value and TC.
3.50
3.00
2.50
2.00
1.50
1.00
0.50
0.00
GND
V
CC
t
t
impedance.
t
t
R and
R dependent on external capacitance and resistive loading and output transistor
R primarily dependent on external pull-up resistor and external capacitive loading.
F ≈ 10ns at 3.3V.
-1
I
Where
OL
t
F calculated at 10%–90% points.
0
of all devices tied to the R/B# pin.
Device
ΣI
L
2, 4, and 8Gb x8/x16 Multiplexed NAND Flash Memory
2
is the sum of the input currents
V
CC
R/B#
Open drain output
t
F
(MAX) – V
4
I
Rp
OL
t
TC
R
+ ΣI
0
19
OL
L
(MAX)
2
=
Micron Technology, Inc., reserves the right to change products or specifications without notice.
4
8mA + ΣI
3.2V
6
L
©2004 Micron Technology, Inc. All rights reserved.
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