MT29F8G08FABWP Micron Technology, Inc, MT29F8G08FABWP Datasheet - Page 24

• Manufacturer Part Number: MT29F8G08FABWP
• Manufacturer: Micron Technology, Inc

READ Operations
PAGE READ 00h–30h
Figure 17:
09005aef818a56a7 pdf/ 09005aef81590bdd source
2gb_nand_m29b__2.fm - Rev. H 9/05 EN
WE#
R/B#
ALE
I/Ox
CE#
RE#
CLE
00h
PAGE READ Operation
On initial power up, each device defaults to read mode. To enter the read mode while in
operation, write the 00h–30h command sequence to the command register along with
the five ADDRESS cycles.
Writing 00h to the command register starts the ADDRESS LATCH cycle. Five ADDRESS
cycles are input next. Finally the 30h command is loaded into the command register.
While monitoring the read status to determine when the
data register) is complete, the user must re-issue the READ (00h) command to make the
change from STATUS to DATA. (See Figure 43 on page 51 and Figure 44 on page 52 for
examples.) After the READ command has been re-issued, pulsing the RE# line will result
in outputting data, starting from the initial column address.
A serial page read sequence outputs a complete page of data. After 30h is written, the
page data is transferred to the data register, and R/B# goes LOW during the transfer.
When the transfer to the data register is complete, R/B# returns HIGH. At this point, data
can be read from the device. Starting from the initial column address to the end of the
page, read the data by repeatedly pulsing RE# at the maximum
on page 24.)
Address (5 Cycles)
2, 4, and 8Gb x8/x16 Multiplexed NAND Flash Memory
24
30h
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
R
t
R (transfer from Flash array to
Command Definitions
Data Output (Serial Access)
©2004 Micron Technology, Inc. All rights reserved.
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RC rate. (See Figure 17
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