STB11NB40T4 ST Microelectronics, Inc., STB11NB40T4 Datasheet

no-image

STB11NB40T4

Manufacturer Part Number
STB11NB40T4
Description
N-channel 400V - 0.48 Ohm - 10.7A D2PAK/I2PAK PowerMESH" MOSFET
Manufacturer
ST Microelectronics, Inc.
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STB11NB40T4
Manufacturer:
ST
Quantity:
12 500
Part Number:
STB11NB40T4
Manufacturer:
ST
0
Table 1. General Features
FEATURES SUMMARY
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstand-
ing performances. The new patent pending strip
layout coupled with the Company’s proprietary
edge termination structure, gives the lowest
R
capabilities and unrivalled gate charge and switch-
ing characteristics.
APPLICATIONS
Table 2. Order Codes
April 2004
DS(on)
STB11NB40-1
TYPICAL R
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
HIGH CURRENT, HIGH SPEED SWITCHING
SWITCH MODE POWER SUPPLIES (SMPS)
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
STB11NB40
STB11NB40T4
STB11NB40-1
Part Number
Type
per area, exceptional avalanche and dv/dt
DS(on)
400 V
400 V
V
= 0.48 Ω
DSS
N-CHANNEL 400V - 0.48 Ω - 10.7A D
< 0.55 Ω
< 0.55 Ω
R
B11NB40
B11NB40
DS(on)
Marking
10.7 A
10.7 A
I
D
Figure 1. Package
Figure 2. Internal Schematic Diagram
Package
D
I
2
2
PAK
PAK
PowerMESH™ MOSFET
TO-262
I
2
PAK
STB11NB40-1
1 2
STB11NB40
3
TAPE & REEL
Packaging
2
PAK/I
TUBE
REV. 2
TO-263
D
2
PAK
2
1
PAK
3
1/11

Related parts for STB11NB40T4

STB11NB40T4 Summary of contents

Page 1

... HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITCH MODE POWER SUPPLIES (SMPS) ■ DC-AC CONVERTERS FOR WELDING ■ EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE Table 2. Order Codes Part Number STB11NB40T4 STB11NB40-1 April 2004 Figure 1. Package R I DS(on) D 10.7 A 10.7 A Figure 2. Internal Schematic Diagram ...

Page 2

STB11NB40/STB11NB40-1 Table 3. Absolute Maximum Ratings Symbol V Drain-source Voltage ( Drain- gate Voltage (R DGR V Gate-source Voltage GS I Drain Current (cont Drain Current (cont (1) Drain Current (pulsed) ...

Page 3

ELECTRICAL CHARACTERISTICS (T Table 6. Off Symbol Parameter V Drain-source (BR)DSS Breakdown Voltage I Zero Gate Voltage DSS Drain Current ( Gate-body Leakage GSS Current ( (1) Table 7. On Symbol Parameter V ...

Page 4

STB11NB40/STB11NB40-1 Table 11. Source Drain Diode Symbol Parameter I Source-drain Current SD (1) Source-drain Current I SDM (pulsed) (2) Forward On Voltage Reverse Recovery Time rr Q Reverse RecoveryCharge rr I Reverse RecoveryCharge RRAM Note: 1. Pulse ...

Page 5

Figure 7. Transconductance Figure 9. Gate Charge vs Gate-source Voltage Figure 11. Normalized Gate Thresold Voltage vs Temperature STB11NB40/STB11NB40-1 Figure 8. Static Drain-source On Resistance Figure 10. Capacitance Variations Figure 12. Normalized On Resistance vs Temperature 5/11 ...

Page 6

STB11NB40/STB11NB40-1 Figure 13. Source-drain Diode Forward Characteristics 6/11 ...

Page 7

Figure 14. Unclamped Inductive Load Test Circuit Figure 16. Switching Times Test Circuits For Resistive Load Figure 18. Test Circuit For Inductive Load Switching And Diode Recovery Times STB11NB40/STB11NB40-1 Figure 15. Unclamped Inductive Waveforms Figure 17. Gate Charge Test Circuit ...

Page 8

STB11NB40/STB11NB40-1 PACKAGE MECHANICAL 2 Table 12. I PAK Mechanical Data Symbol Min A 4.40 A1 2.40 b 0.61 b1 1.14 c 0.49 c2 1.23 D 8.95 e 2.40 e1 4.95 E 10.00 L 13.00 L1 3.50 L2 1.27 2 Figure ...

Page 9

Table 13. D PAK Mechanical Data Symbol Min A 4.4 A1 2.49 A2 0.03 B 0.7 B2 1.14 C 0.45 C2 1. 1.27 L3 1.4 M 2.4 R ...

Page 10

STB11NB40/STB11NB40-1 REVISION HISTORY Table 14. Revision History Date Revision March-1998 1 14-Apr-2004 2 10/11 Description of Changes First Issue Stylesheet update. No content change. ...

Page 11

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. ...

Related keywords