MD2009DFX_0610 ST Microelectronics, Inc., MD2009DFX_0610 Datasheet

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MD2009DFX_0610

Manufacturer Part Number
MD2009DFX_0610
Description
High Voltage NPN Power Transistor for Standard Definition CRT Display
Manufacturer
ST Microelectronics, Inc.
Datasheet
General features
Applications
Description
The MD2009DFX is manufactured using Diffused
Collector in Planar Technology adopting new and
enhanced high voltage structure. The new MD
product series show improved silicon efficiency
bringing updated performance to the Horizontal
Deflection stage.
October 2006
Order codes
State-of-the-art technology:
– diffused collector “enhanced generation”
More stable performance versus operating
temperature variation
Low base drive requirement
Tighter h
Fully insulated power package U.L. compliant
Integrated free wheeling diode
In compliance with the 2002/93/EC European
directive
Horizontal deflection output for TV
High voltage NPN Power transistor for standard definition CRT
Part number
MD2009DFX
FE
range at operating collector current
MD2009DFX
Marking
Rev 4
Internal schematic diagram
R
ISOWATT218FX
BE
Package
=60Ω typ.
ISOWATT218FX
MD2009DFX
1
Packaging
2
Tube
3
display
www.st.com
1/10
10

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MD2009DFX_0610 Summary of contents

Page 1

High voltage NPN Power transistor for standard definition CRT General features ■ State-of-the-art technology: – diffused collector “enhanced generation” ■ More stable performance versus operating temperature variation ■ Low base drive requirement ■ Tighter h range at operating collector current ...

Page 2

Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol V Collector-emitter voltage (V CES V Collector-emitter voltage (I CEO V Base-emitter voltage (I EBO I Collector current C I Collector peak current ( Base current B ...

Page 3

MD2009DFX 2 Electrical characteristics (Tcase =25°C unless otherwise specified) Table 3. Electrical characteristics Symbol Collector cut-off I CES current (V Emitter Cut-off Current I EBO ( Emitter-base breakdown voltage V (BR)EBO ( Collector-emitter (1) ...

Page 4

Electrical characteristics 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 3. Output characterisics 4/10 Figure 2. Derating curve Figure 4. Reverse biased SOA MD2009DFX ...

Page 5

MD2009DFX Figure 5. DC current gain Figure 7. Collector-emitter saturation volatge Figure 8. Figure 9. Power losses Electrical characteristics Figure 6. DC current gain Base-emitter saturation voltage Figure 10. Inductive load switching time 5/10 ...

Page 6

Test circuits 3 Test circuits Figure 11. Power losses and inductive load switching test circuit Figure 12. Reverse biased safe operating area test circuit 6/10 MD2009DFX ...

Page 7

MD2009DFX 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on ...

Page 8

Package mechanical data DIM Dia 8/10 ISOWATT218FX MECHANICAL DATA MIN. 5.30 2.80 3.10 1.80 0.80 0.65 1.80 10.30 15.30 9 22.80 ...

Page 9

MD2009DFX 5 Revision history Table 4. Revision history Date 27-Feb-2006 28-Mar-2006 22-May-2006 20-Oct-2006 Revision 1 First release 2 New curves 9 and 10 inserted 3 Values changed on Table 1 4 New hFE limits shown on Revision history Changes and ...

Page 10

Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any ...

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