SST108 Vishay Intertechnology, SST108 Datasheet
SST108
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SST108 Summary of contents
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... D Fast Switching— Low Leakage Low Capacitance Low Insertion Loss The J/SST108 series is designed with high-performance analog switching applications in mind. It features low on-resistance, good off-isolation, and fast switching. The SST108 series is comprised of surface-mount devices featuring the lowest r DS(on) (SOT-23) JFET device ...
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... J/SST108 Series Vishay Siliconix Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Lead Temperature ( / ” from case for 10 sec Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . _ Parameter Symbol Static Gate-Source V (BR)GSS Breakdown Voltage Gate-Source Cutoff Voltage V GS(off) b Saturation Drain Current I DSS Gate Reverse Current I GSS Gate Operating Current I G Drain Cutoff Current ...
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... 800 600 I 400 DSS 200 0 –8 –10 = –2 V –4 V – 125 105 D –8 –10 J/SST108 Series Vishay Siliconix On-Resistance vs. Drain Current 25_C –2 V GS(off – – – Drain Current (mA) D Output Characteristics ...
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... J/SST108 Series Vishay Siliconix Capacitance vs. Gate-Source Voltage 100 MHz iss C 20 rss 0 0 –4 –8 –12 V – Gate-Source Voltage (V) GS Forward Transconductance and Output Conductance vs. Gate-Source Cutoff Voltage 200 g and kHz ...
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... T = 25_C 0 – Frequency (MHz) J/SST110 –5 V 150 GS(H) V GS(L) J/SST108 Series Vishay Siliconix Common Gate Reverse Admittance T = 25_C –g rg – – Frequency (MHz 100 V DD ...